? 1/6 table 1: main features description the tynx10 silicon controlled rectifiers is a high performance glass passivated technology. this general purpose silicon controlled rectifiers is designed for power supply up to 400hz on resis- tive or inductive load. symbol value unit i t(rms) 10 a v drm /v rrm 400, 600 and 800 v i gt 15 ma tynx10 series 10a scr rev. 2 february 2006 standard table 2: order codes part numbers marking tyn410rg tyn410 TYN610rg TYN610 tyn810rg tyn810 a k g a k g a to-220ab table 3: absolute ratings (limiting values) symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) t c = 100c 10 a it (av) average on-state current (180 conduction angle) t c = 100c 6.4 a i tsm non repetitive surge peak on-state current t p = 8.3 ms t j = 25c 105 a t p = 10 ms 100 i 2 ti 2 t value for fusing t p = 10 ms t j = 25c 50 a 2 s di/dt critical rate of rise of on-state current i g = 100 ma , di g /dt = 0.1 a/s t j = 125c 50 a/s i gm peak gate current t p = 20 s t j = 125c 4a p g(av) average gate power dissipation t j = 125c 1w p gm maximum gate power t p = 20 s t j = 125c 10 w v drm v rrm repetitive peak off-state voltage tyn410 t j = 125c 400 v TYN610 600 tyn810 800 t stg t j storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c t l maximum lead temperature for soldering during 10s at 2mm from case 260 c
tynx10 series 2/6 tables 4: electrical characteristics (t j = 25c, unless otherwise specified) table 5: thermal resistance symbol test conditions value unit i gt v d = 12 v (d.c.) r l = 33 ? max. 15 ma v gt max. 1.5 v v gd v d = v drm r l = 3.3 k ? t j = 110c min. 0.2 v t gt v d = v drm i g = 40 ma di g /dt = 0.5 a/s typ. 2 s i h i t = 100 ma gate open max. 30 ma i l i g = 1.2 x i gt typ. 50 ma dv/dt linear slope up to: v d = 67 % v drm gate open t j = 110c min. 200 v/s v tm i tm = 20 a tp = 380 s max. 1.6 v i drm i rrm v drm = v rrm t j = 25c max. 10 a t j = 110c 2ma t q v d = 67 % v drm i tm = 20 a v r = 25 v di tm /dt = 30 a/s dv d /dt = 50 v/s t j = 110c typ. 70 s symbol parameter value unit r th(j-c) junction to case (d.c.) 2.5 c/w r th(j-a) junction to ambient 60 c/w figure 1: maximum average power dissipation versus average on-state current figure 2: correlation between maximum average power dissipation and maximum allowable temperature (t amb and t lead ) p(w) i (a) t(av) 360 = 180 dc = 120 = 90 = 30 = 60 12 10 8 6 4 2 0 0123456 8 79 t (c) amb 0 20 40 60 80 100 120 140 125 120 100 105 115 110 p(w) t (c) case 12 10 8 6 4 2 0 = 180 r = 6c/w th r = 4c/w th r = 2c/w th r = 0c/w th
tynx10 series 3/6 figure 3: average on-state current versus case temperature figure 4: relative variation of thermal impedance versus pulse duration figure 5: relative variation of gate trigger current versus junction temperature figure 6: surge peak on-state current versus number of cycles figure 7: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of i2t figure 8: on-state characteristics (maximum values) i (a) t(av) 12 10 8 6 4 2 0 0 10 20 30 40 60 70 90 110 120 50 80 100 130 t (c) case = 180 d.c. k=[z /r th(j-c) th(j-c) ] t (s) p z th(j-c) z th(j-a) 1 0.1 0.01 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 t (c) j i,i,i[t] / gt h l j i ,i ,i [t =25c] gt h l j i gt i h & i l 2.5 2 1.5 1 0.5 0 -20 -30 -40 0 10 -10 20 40 30 50 60 70 80 90 100 110 i (a) tsm number of cycles t initial=25c j t =10ms p one cycle 120 100 80 60 40 20 0 1 10 100 1000 i (a), i t (a s) tsm 22 t (ms) p i t 2 i tsm t initial = 25c j 10 100 1 2 510 i (a) tm 1000 100 10 1 012345 v (v) tm v =0.82v r =24m t max.: j t0 d ? t j =max t =25c j
tynx10 series 4/6 figure 9: ordering information scheme table 6: product selector tyn 4 10 rg standard scr series packing mode voltage current 4 = 400v 10 = 10a rg = tube part numbers voltage (xxx) sensitivity package 400 v 600 v 800v tyn410rg x 15 ma to-220ab TYN610rg x tyn810rg x
tynx10 series 5/6 figure 10: to-220ab package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com . c b2 c2 f ? i l a a1 a2 b e b1 i4 l3 l2 c1 m ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 ?i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102 table 7: ordering information ordering type marking package weight base qty delivery mode tyn410rg tyn410 to-220ab 2.3 g 50 tube TYN610rg TYN610 tyn810rg tyn810 table 8: revision history date revision description of changes sep-2001 1a first issue. 13-feb-2006 2 to-220ab delivery mode changed from bulk to tube. ecopack statement added.
tynx10 series 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered tr ademark of stmicroelectronics. all other names are the property of their respective owners ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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