gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh GFCF30 n channel high voltage, power mosfet chip specification general description: * advanced process technology * dynamic dv/dt rating * 150 operating temperature * fast switching * fully avalanche rated * high breakdown voltage mechanical data: d17 dimension 4.42mm x 5.23mm thickness: 480 ? m metallization : top : : al backside : crniag / au suggested bonding conditions: die mounting: solder perform 95/5 pbsn or 92.5./2.5/5 pbagin source bonding wire : 10 mil al absolute maximum rating @ta=25 characteristics symbol limit unit test conditions drain-to-source breakdown voltage v(br)dss 900 v vgs=0v, id=250 ? static drain-to - source on-resistance rds(on) 4 ? vgs=10v, id=2.2 continuous drain current ( in target package) id@25 3.6 a vgs=10v continuous drain current ( in target package) id@100 2.3 a vgs=10v operation junction tj -55~175 storage temperature t str -55~175 target device: irfbf30 to-220ab p d 125 w @tc=25
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