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| d a t a sh eet product data sheet supersedes data of 1997 mar 25 1999 apr 12 discrete semiconductors 2pb1219a pnp general purpose transistor handbook, halfpage m3d187
1999 apr 12 2 nxp semiconductors product data sheet pnp general purpose transistor 2pb1219a features ? high current (max. 500 ma) ? low voltage (max. 50 v) ? low collector-emitter saturation voltage (max. 600 mv). applications ? general purpose switching and amplification. description pnp transistor in a sot323; sc70 plastic package. npn complement: 2pd1820a. marking note 1. ? = - : made in hong kong. ? = t : made in malaysia. pinning type number marking code (1) 2pb1219aq d ? q 2PB1219AR d ? r 2pb1219as d ? s pin description 1 base 2 emitter 3 collector fig.1 simplified outline (sot323; sc70) and symbol. handbook, halfpage mam048 top view 2 1 3 2 3 1 limiting values in accordance with the absolute maximum rating system (iec 134). note 1. refer to sot323; sc70 standard mounting conditions. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter ? ? 60 v v ceo collector-emitter voltage open base ? ? 50 v v ebo emitter-base voltage open collector ? ? 5 v i c collector current (dc) ? ? 500 ma i cm peak collector current ? ? 1 a i bm peak base current ? ? 200 ma p tot total power dissipation t amb 25 c; note 1 ? 200 mw t stg storage temperature ? 65 +150 c t j junction temperature ? 150 c t amb operating ambient temperature ? 65 +150 c 1999 apr 12 3 nxp semico nductors product data sheet pnp general purpose transistor 2pb1219a thermal characteristics note 1. refer to sot323; sc70 standard mounting conditions. characteristics t amb = 25 c unless otherwise specified. note 1. pulse test: t p 300 s; 0.02. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 625 k/w symbol parameter conditions min. max. unit i cbo collector cut-off current i e = 0; v cb = ? 20 v ? ? 100 na i e = 0; v cb = ? 20 v; t j = 150 c ? ? 5 a i ebo emitter cut-off current i c = 0; v eb = ? 4 v ? ? 100 na h fe dc current gain i c = ? 150 ma; v ce = ? 10 v; note 1 2pb1219aq 85 170 2PB1219AR 120 240 2pb1219as 170 340 h fe dc current gain i c = ? 500 ma; v ce = ? 10 v; note 1 40 ? v cesat collector-emitter saturation voltage i c = ? 300 ma; i b = ? 30 ma; note 1 ? ? 600 mv v besat base-emitter saturation voltage ic = ? 300 ma; ib = ? 30 ma; note 1 ? ? 1.5 v c c collector capacitance i e = i e = 0; v cb = ? 10 v; f = 1 mhz ? 15 pf f t transition frequency i c = 50 ma; v ce = ? 10 v; f = 100 mhz; note 1 2pb1219aq 100 ? mhz 2PB1219AR 120 ? mhz 2pb1219as 140 ? mhz 1999 apr 12 4 nxp semico nductors product data sheet pnp general purpose transistor 2pb1219a package outline unit a 1 max b p cd e e 1 h e l p qw v references outline version european projection issue date iec jedec eiaj mm 0.1 1.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.2 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot323 sc-70 w m b p d e 1 e a b a 1 l p q detail x c h e e v m a a b y 0 1 2 mm scale a x 12 3 plastic surface mounted package; 3 leads sot32 3 97-02-28 1999 apr 12 5 nxp semico nductors product data sheet pnp general purpose transistor 2pb1219a data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors. no changes were made to the content, except for the legal definitions and disclaimers. printed in the netherlands 115002/00/03/pp6 date of release: 1999 apr 12 document order number: 9397 750 05589 |
Price & Availability of 2PB1219AR
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