inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD523 description collector-emitter breakdown voltage- : v (br)ceo = 80v(min.) high dc current gain- : h fe = 1000(min.)@i c = 3a low collector saturation voltage- : v ce (sat) = 1.5v(max.)@ i c = 3a applications designed for power switching applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current-continunous 7 a i b b base current-continunous 0.2 a p c collector power dissipation @t c =25 50 w t j junction temperature 150 t stg storage temperature range -65~+150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD523 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 80 v v ce (sat)-1 collector-emitter saturation voltage i c = 3a; i b = 6ma b 1.5 v v ce (sat)-2 collector-emitter saturation voltage i c = 7a; i b = 14ma b 2.0 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 6ma b 2.5 v i cbo collector cutoff current v ce = 80v; i b = 0 b 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 3.0 ma h fe-1 dc current gain i c = 3a, v ce = 3v 2000 15000 h fe-2 dc current gain i c = 7a, v ce = 3v 1000 switching times t on turn-on time 0.8 s t stg storage time 3.0 s t f fall time i c = 3a, i b1 = -i b2 =6ma; v cc = 45v; r l = 15 2.5 s isc website www.iscsemi.cn
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