? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c30a i dm t c = 25 c, pulse width limited by t jm 75 a i ar t c = 25 c30a e ar t c = 25 c40mj e as t c = 25 c 1.2 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 5 ? p d t c = 25 c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c for 10s m d mounting torque (to-247, to-3p) 1.13/10 nm/lb.in. weight to-247 6 g to-268 5 g plus220, plus220smd 4 g to-3p 5.5 g g = gate d = drain s = source tab = drain ds99415(07/05) polarhv tm power mosfet advance technical information n-channel enhancement modeavalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect ixth 30n50p ixtt 30n50p ixtq 30n50p ixtv 30n50p ixtv 30n50ps v dss = 500 v i d25 = 30 a r ds(on) = 200 m ? ? ? ? ? to-247 ad (ixth) (tab) to-268 (ixtt) g s d (tab) g s d plus220 (ixtv) to-3p (ixtq) g d s (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 165 200 m ? pulse test, t 300 s, duty cycle d 2 % plus220 smd(ixtv..s) d (tab) d (tab) g s
ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n50p ixtq 30n50p ixtt 30n50p ixtv 30n50p ixtv 30n50ps ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 17 27 s c iss 4150 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 445 pf c rss 28 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 27 ns t d(off) r g = 5 ? (external) 75 ns t f 21 ns q g(on) 70 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 27 nc q gd 22 nc r thjc 0.27 k/w r thck (to-247, to-3p and plus220) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 30 a i sm repetitive 90 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 18 a, -di/dt = 100 a/ s 400 ns fig. 2. exte nded output characteris tics @ 25 o c 0 10 20 30 40 50 60 70 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig. 1. output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 27 30 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 6v
? 2005 ixys all rights reserved fig. 3. output characteristics @ 125 o c 0 3 6 9 12 15 18 21 24 27 30 0 2 4 6 8 10 12 14 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 30a i d = 15a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 0 1020304050607080 i d - amperes r d s ( o n ) - normalized t j = 125 c t j = 25 c v gs = 10v fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v g s - volts i d - amperes t j = 125 c 25 c -40 c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes g f s - siemens t j = -40 c 25 c 125 c ixth 30n50p ixtq 30n50p ixtt 30n50p ixtv 30n50p ixtv 30n50ps
ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n50p ixtq 30n50p ixtt 30n50p ixtv 30n50p ixtv 30n50ps ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rs f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070 q g - nanocoulombs v g s - volts v ds = 250v i d = 15a i g = 10ma fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 12. forw ard-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 c t c = 25 c r ds(on) limit 10ms 25 s fig. 13. m axim um transient therm al resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - c / w
? 2005 ixys all rights reserved to-247 ad (ixth) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc d1 l l3 l1 e1 e e b d c a2 a1 a l2 terminals: 1-gate 2-drain e1 e l2 d l3 l l 1 3x b 2x e c a 2 a1 a e1 d1 plus220 (ixtv) outline to-3p (ixtq) outline l l3 l2 l1 a1 e1 e d1 e b d c a2 a a3 l4 terminals: 1-gate 2-drain e e1 d l2 a a1 l 1 l l3 e 2x b c a 2 l 4 a 3 e1 package outline drawings to-268 (ixtt) outline ixth 30n50p ixtq 30n50p ixtt 30n50p ixtv 30n50p ixtv 30n50ps
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