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| inchange semiconductor isc product specification isc silicon pnp power transistors 2SB656 description collector-emitter breakdown voltage- : v (br)ceo = -160v(min) high power dissipation- : p c = 125w(max)@t c =25 complement to type 2sd676 applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -160 v v ceo collector-emitter voltage -160 v v ebo emitter-base voltage -5 v i c collector current-continuous -12 a i cm collector current-peak -20 a p c collector power dissipation @t c =25 125 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors 2SB656 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma; r be = -160 v v (br)ebo emitter-base breakdown voltage i e = -5ma; i c = 0 -5 v v ce (sat) collector-emitter saturation voltage i c = -6a; i b = -0.6a b -2.5 v v be (on) base-emitter on voltage i c = -1a; v ce = -5v -1.5 v i cbo collector cutoff current v cb = -120v; i e = 0 -0.1 ma h fe-1 dc current gain i c = -1a; v ce = -5v 60 200 h fe-2 dc current gain i c = -6a; v ce = -5v 20 f t current-gain?bandwidth product i c = -1a; v ce = -5v 22 mhz ? h fe classifications b c 60-120 100-200 isc website www.iscsemi.cn |
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