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| savantic semiconductor product specification silicon npn power transistors 2SD633 2sd635 description with t o-220c package complement to type 2sb673/675 darlington high dc current gain low saturation voltage applications high power switching hammer drive,pulse motor drive pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SD633 100 v cbo collector-base voltage 2sd635 open emitter 60 v 2SD633 100 v ceo collector-emitter voltage 2sd635 open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 7 a i b base current 0.7 a p c collector dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -50~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD633 2sd635 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SD633 100 v (br)ceo collector-emitter breakdown voltage 2sd635 i c =50ma; i b =0 60 v v cesat-1 collector-emitter saturation voltage i c =3a; i b =6ma 1.5 v v cesat-2 collector-emitter saturation voltage i c =7a; i b =14ma 2.0 v v besat base-emitter saturation voltage i c =3a; i b =6ma 2.5 v 2SD633 v cb =100v; i e =0 i cbo collector cut-off current 2sd635 v cb =60v; i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 3.0 ma h fe-1 dc current gain i c =3a ; v ce =3v 2000 15000 h fe-2 dc current gain i c =7a ; v ce =3v 1000 switching times t on turn-on time 0.8 s t s storage time 3.0 s t f fall time i b1 =-i b2 =6ma v cc =45v;r l =15 a 2.5 s savantic semiconductor product specification 3 silicon npn power transistors 2SD633 2sd635 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
Price & Availability of 2SD633
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