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preliminary datasheet low power, dual si m card hybrid switch idths421v16 idt? low power, dual sim card hybrid switch 1 idths421v16 rev b 012908 description the idths421v16 is a bi-directional, low power, quad single-pole, double-throw (spdt) hybrid switch targeted at dual sim card multiplexing. it is optimized for switching the wlan-sim data and control signals and dedicates one channel as a supply-source switch. this device is compatible with the requirements of sim cards and features a low on capacitance (c on ) of 10 pf to ensure high-speed data transfer. the v sim switch path has a low r on characteristic to insure minimal voltage drop in the dual sim card supply paths. the idths421p16 contains special circuitry that minimizes current consumption when the control voltage applied to the sel pin is lower than the supply voltage (vcc). this feature is especially valuable in ultra- portable applications, such as cell phones; allowing direct interface with the general purpose i/os of the baseband processor. other applications include switching and connector sharing in portable cell phones, pdas, digital cameras, printers, and notebook computers. features ? low on capacitance for data path: 10 pf typical ? low on resistance for data path: 10 ? typical ? low on resistance for supply path: 0.4 ? typical ? low power consumption: 1 a maximum ? 15 a maximum i cct over expanded voltage range (v in = 1.8 v, vcc = 4.3 v) ? wide -3db bandwidth: >160 mhz ? available in 16-pin qfn package ? rohs compliant ? 8 kv esd rating, >16kv power/ground esd rating applications ? cell phones, pdas, digital cameras, and notebooks ? lcd monitors, tv, and set-top boxes analog symbol 1v sim 1rst 2rst 1clk 2clk 1dat 2dat 2v sim v sim rst clk dat sel
idths421v16 low power, dual sim card hybrid switch hybrid switch idt? low power, dual sim card hybrid switch 2 idths421v16 rev b 012908 pin assignment (16-pin qfn) truth table pin descriptions 1v sim sel 1dat 2rst 2dat nc rst gnd 2clk 1clk v sim dat 1rst clk 2v sim vcc 1 4 16-pin qfn sel function logic low 1dat=dat, 1rst=rst, 1clk=clk, 1v sim =v sim logic high 2dat=dat, 2rst=rst, 2clk=clk, 2v sim =v sim pin name pin description ndat, nrst, nclk multiplexed data source inputs. nv sim multiplexed sim supply inputs. v sim , dat, rst, clk common sim ports. sel switch select.
idths421v16 low power, dual sim card hybrid switch hybrid switch idt? low power, dual sim card hybrid switch 3 idths421v16 rev b 012908 absolute maximum ratings stresses above the ratings listed below can cause permane nt damage to the idths421p16. these ratings, which are standard values for idt commercially rated parts, are stress ratings only. functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for exte nded periods can affect product reliability. electrical parameters are guaranteed only over the recommended operating temperature range. note 1 : the input and output negative ratings may be exceeded if the input and output diode current ratings are observed. recommended operation conditions note 2 : the control pin must be held high or low; it must not float. thermal characteristics symbol parameter min. max. units vcc supply voltage -0.5 +5.5 v v cntrl dc input voltage, sel (note 1) -0.5 vcc v v sw dc switch i/o voltage (note 1) -0.5 vcc+0.3 v i ik dc input diode current -50 ma i sim dc output current, v sim 350 ma i out dc output current, dat, clk, rst 35 ma t stg storage temperature -65 +150 c esd human body model, jedec: jesd22-a114 all pins 8 kv i/o to gnd 8 charged device model, jedec: jesd22-c101 2 symbol parameter min. max. units vcc supply voltage 2.7 4.3 v v cntrl control input voltage, sel (note 2) 0 vcc v v sw switch i/o voltage -0.5 vcc v i sim dc output current, v sim 150 ma i out dc output current, dat, clk, rst 25 ma t a operating temperature -40 +85 c parameter symbol conditions min. typ. max. units thermal resistance junction to ambient ja still air 69.4 c/w ja 1 m/s air flow 60.7 c/w ja 2.5 m/s air flow 54.4 c/w thermal resistance junction to case jc 9.7 c/w
idths421v16 low power, dual sim card hybrid switch hybrid switch idt? low power, dual sim card hybrid switch 4 idths421v16 rev b 012908 dc electrical characteristics unless stated otherwise, vcc = 3.3 v @ 25c notes : 3 . measured by the voltage drop between ndat, nrst, nclk and relative common port pins at the indicated current through the switch. on resistance is determined by the lower of the voltage on the relative ports. 4 . guaranteed by characterization. parameter symbol conditions vcc (v) t a = -40c to +85c units min. typ. max. clamp diode voltage v ik i in = 18 ma 2.7 -1.2 v input voltage high v ih 2.7 to 3.6 1.3 v 4.3 1.7 input voltage low v il 2.7 to 3.6 0.5 v 4.3 0.7 control input leakage i in v sw = 0 to vcc 4.3 -1 1 a off state leakage i nc(off) , i no(off) nrst, ndat, nclk, nv sim = 0.3 v or 3.6 v (fig. 2) 4.3 -60 60 na data path switch on resistance (note 3) r ond v sw = 0, 2.3 v, i on = -20 ma (fig. 1) 2.7 6.0 10.0 ? v sim switch on resistance (note 3) r onv v sw = 0, 2.3 v, i on = -100 ma (fig. 1) 2.7 0.4 0.6 ? data path delta on resistance (note 4) r ond v sw = 0v, i on = -20 ma 2.7 0.65 ? quiescent supply current i cc v cntrl = 0 or vcc, i out = 0 4.3 1.0 a increase in i cc current per control voltage and vcc i cct v cntrl = 2.6 v, vcc = 4.3 v 4.3 10.0 a v cntrl = 1.8 v, vcc = 4.3 v 4.3 15.0
idths421v16 low power, dual sim card hybrid switch hybrid switch idt? low power, dual sim card hybrid switch 5 idths421v16 rev b 012908 ac electrical characteristics unless stated otherwise, vcc = 3.3 v @ 25c note : 5 . guaranteed by characterization. capacitance parameter symbol conditions vcc (v) t a = -40c to +85c units min. typ. max. turn-on time sel to output (dat, clk, rst) t ond r l = 50 ? , c l = 35 pf, v sw = 1.5 v (fig. 3, fig. 4) 2.7 to 3.6 60 ns turn-off time sel to output (dat, clk, rst) t offd r l = 50 ? , c l = 35 pf, v sw = 1.5 v (fig. 3, fig. 4) 2.7 to 3.6 40 ns turn-on time sel to output (v sim ) t onv r l = 50 ? , c l = 35 pf, v sw = 1.5 v (fig. 3, fig. 4) 2.7 to 3.6 50 ns turn-off time sel to output (v sim ) t offv r l = 50 ? , c l = 35 pf, v sw = 1.5 v (fig. 3, fig. 4) 2.7 to 3.6 40 ns propagation delay (dat, clk, rst) t pd r l = 50 ? , c l = 35 pf, (fig. 3, fig. 5), note 5 3.3 0.25 ns break-before-make (v sim ) t bbmv r l = 50 ? , c l = 35 pf, v sw1 = v sw2 = 1.5 v (fig. 7), note 5 2.7 to 3.6 3 12 ns break-before-make (dat, clk, rst) t bbmd r l = 50 ? , c l = 35 pf, v sw1 = v sw2 = 1.5 v (fig. 7), note 5 2.7 to 3.6 3 18 ns charge injection (dat, clk, rst) qr gen = 0 ? , c l = 50 pf, v gen = 0v 2.7 to 3.6 10 pc off isolation (dat, clk, rst) o irr r l = 50 ? , f = 10 mhz (fig. 9) 2.7 to 3.6 -80 db non-adjacent channel crosstalk (dat, clk, rst) xtalk r l = 50 ? , f = 10 mhz (fig. 10) 2.7 to 3.6 -80 db -3 db bandwidth (dat, clk, rst) bw r l = 50 ? , c l = 5 pf (fig. 8) 2.7 to 3.6 >160 mhz parameter symbol conditions t a = -40c to +85c units min. typ. max. control pin input capacitance c in vcc = 0v 1.5 pf rst, clk, dat on capacitance c ond vcc = 3.3 v, f = 1 mhz (fig. 12) 10 12 v sim on capacitance c onv vcc = 3.3 v, f = 1 mhz (fig. 12) 130 150 rst, clk, dat off capacitance c offd vcc = 3.3 v(fig. 11) 3 v sim off capacitance c offv vcc = 3.3 v(fig. 11) 40
idths421v16 low power, dual sim card hybrid switch hybrid switch idt? low power, dual sim card hybrid switch 6 idths421v16 rev b 012908 test diagrams figure 1: on resistance figure 2: off leakage figure 3: ac test circuit load figure 4: turn-on/turn-off waveforms figure 5: propagation delay v sel = 0 or vcc v sw gnd nv sim , nrst, nclk, or ndat v out, rst, clk, or dat i on r on = v on / i on v on v sel = 0 or vcc v sw gnd nc i na (off) a v sw gnd nv sim , nrst, nclk, or ndat v sim, rst, clk, or dat v out r l and c l are functions of the application environment (see tables for specific values). c l includes test fixture and stray capacitance. r l sel c l gnd input - v sel gnd output - v out v cc v ol 90% 90% v oh t off 90% t rise = 2.5 ns 90% 10% 10% t fall = 2.5 ns t on v cc /2 v cc /2 input - v sw gnd output - v out v cc v ol 50% 90% v oh 90% t rise = 2.5 ns 50% 10% 10% t fall = 2.5 ns t plh v cc /2 v cc /2 t phl
idths421v16 low power, dual sim card hybrid switch hybrid switch idt? low power, dual sim card hybrid switch 7 idths421v16 rev b 012908 figure 6: charge injection figure 7: break-before-make interval timing figure 8: bandwidth figure 9: channel off isolation figure 10: non-adjacent channel-to-channel crosstalk v sw gnd nv sim , nrst, nclk, or ndat v sim, rst, clk, or dat v out r l sel c l gnd off off on v cc 0v logic input v out v out q = x c l v out v sw1 gnd nv sim , nrst, nclk, or ndat v sim, rst, clk, or dat v out r l and c l are functions of the application environment (see tables for specific values). c l includes test fixture and stray capacitance. r l sel c l gnd v sw2 gnd input - v sel t rise = 2.5 ns v cc 90% 10% 0v v out 0.9 x v out 0.9 x v out t bbm v cc /2 network analyzer v sel v in gnd r s r s and r t are functions of the application environment (see tables for specific values). v s r t v out gnd gnd gnd network analyzer v sel v in gnd r s r s and r t are functions of the application environment (see tables for specific values). v s r t v out gnd gnd gnd r t gnd off isolation = 20 log (v out / v in ) network analyzer v sel v in gnd r s r s and r t are functions of the application environment (see tables for specific values). v s r t v out gnd gnd gnd r t gnd crosstalk = 20 log (v out / v in ) nc
idths421v16 low power, dual sim card hybrid switch hybrid switch idt? low power, dual sim card hybrid switch 8 idths421v16 rev b 012908 figure 11: channel off capacitance figure 12: channel on capacitance v sel = 0 or vcc f = 1 mhz nv sim , nrst, nclk, or ndat capacitance meter nv sim , nrst, nclk, or ndat v sel = 0 or vcc f = 1 mhz v sim , rst, clk, or dat capacitance meter nv sim , nrst, nclk, or ndat
idths421v16 low power, dual sim card hybrid switch hybrid switch idt? low power, dual sim card hybrid switch 9 idths421v16 rev b 012908 marking diagram (qfn) notes: 1. ?z? is the device step (1 to 2 characters). 2. yyww is the last two digits of the year and week that the part was assembled. 3. ?$? is the assembly mark code. 4. ?g? after the two-letter package code designates rohs compliant package. 5. ?i? at the end of part number indicates industrial temperature range. 6. bottom marking: country of origin if not usa. tbd
idths421v16 low power, dual sim card hybrid switch hybrid switch idt? low power, dual sim card hybrid switch 10 idths421v16 rev b 012908 package outline and package dimensions (16-pin 3x3mm qfn) package dimensions are kept current with jedec publication no. 95 ordering information parts that are ordered with a ?g? after the two-letter package code are the pb-free configuration and are rohs compliant. while the information presented herein has been checked for both accuracy and reliability, integrated device technology (idt) a ssumes no responsibility for either its use or for the infringement of any paten ts or other rights of third parties, which would resul t from its use. no other circuits, patents, or licenses are im plied. this product is intended for use in normal commercial applications. any other applications such as those requiring extended temperature range, high reliab ility, or other extraordinary environmental requirements are not recommended without additional processing by idt. idt reserves th e right to change any circuitry or specifications without noti ce. idt does not authorize or warrant any idt product for use in life support devices or critical medical instruments. millimeters symbol min max a0.801.00 a1 0 0.05 a3 0.25 reference b0.180.30 e 0.50 basic n16 n d 4 n e 4 d x e basic 3.00 x 3.00 d2 1.55 1.80 e2 1.55 1.80 l0.300.50 part / order number marking shipping packaging package temperature IDTHS421V16NLGI tbd tubes 16-pin qfn -40 to +85 c IDTHS421V16NLGI8 tape and reel 16-pin qfn -40 to +85 c sawn singulation 1 2 n e d index area top view seating plane a3 a1 c a l e2 e2 2 d2 d2 2 e c 0.08 (ref) n d & n e odd (ref) n d & n e even (n d -1)x (ref) e n 1 2 b thermal base (typ) if n d & n e are even (n e -1)x (ref) e e 2
idths421v16 low power, dual sim card hybrid switch hybrid switch idt? low power, dual sim card hybrid switch 11 idths421v16 rev b 012908 revision history rev. originator date description of change a js 01/15/08 preliminary datasheet. initial release. b js 02/12/08 change the part number to idths421v16.
? 2006 integrated device technology, inc. all rights reserved. product specifications subject to change without notice. idt and the idt logo are trademarks of integrated device technology, inc. accelerated thinking is a service mark of integrated device technology, inc. all other brands, product names a nd marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners. printed in usa corporate headquarters integrated device technology, inc. www.idt.com for sales 800-345-7015 408-284-8200 fax: 408-284-2775 for tech support www.idt.com/go/clockhelp innovate with idt and accelerate your future netw orks. contact: www.idt.com idths421v16 low power, dual sim card hy brid switch hybrid switch

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