solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering informatio n 1 / sft2369a2 _ _ _ _ 2 / _ _ = commercial tx= tx level txv= txv level s= s level g w = gullwing sft2369a2 series dual microminiature package 100 ma 15 volts dual npn transistor features: ? high speed switching transistor ? suitable in chopper, uhf and rf application ? multiple devices reduce board space ? replacement for 2n2369au ? tx, txv, s-level screening available 2 / maximum ratings symbol value units collector ? emitter voltage v ceo 15 volts collector ? base voltage v cbo 40 volts emitter ? base voltage v ebo 4.5 volts continuous collector current i c 100 ma power dissipation @ t a = 25oc per device total p d 360 500 mw operating & storage temperature t op & t stg -65 to +200 oc maximum thermal resistance (junction to pcb) r j-pcb 350 oc/w gullwin g (gw) tolerances: .xx .01 .xxx .005 pin 1 pin 4 pin 6 pin 3 pin 1 pin 4 pin 6 pin 3 ssdi .193 .015.010 .040 .010 .350 .010 6x r.010 .033 3x .015 .010 .107 .130 2x .050 (=.100) 6x .030 .107 .034 .125 6x .010 .025 5x r.018 .015 .035 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0045b doc
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sft2369a2 series electrical characteristic 4 / symbol min max units collector ? emitter sustaining voltage i c = 10 ma bv ceo 15 ? volts collector cutoff current v ce = 20 v, v be = 0 v v ce = 10 v, v be = 0.25 v, t a = 125oc i cex ? 0.4 30 a collector cutoff current v cb = 32 v v cb = 40 v v cb = 20 v, t a = 150oc i cbo ? 0.2 10 30 a emitter cutoff current v eb = 4.0 v v eb = 4.5 v i ebo ? 0.25 10 a dc forward current transfer ratio 5 / v ce = 0.35 v, i c =10ma v ce = 0.40 v, i c = 30 ma v ce = 1.0 v, i c = 10 ma v ce = 1.0 v, i c = 100 ma v ce = 1.0 v, i c = 10 ma, t a = -55oc h fe 40 30 40 20 20 120 120 120 120 ? collector ? emitter saturation volta g e 5 / i c =10ma, i b =1.0 ma i c = 30 ma, i b = 3.0 ma i c = 100 ma, i b = 10 ma i c = 10 ma, i b = 1.0 ma, t a = 125oc v ce(sat) ? ? ? ? 0.20 0.25 0.45 0.30 volts base ? emitter saturation volta g e 5 / i c =10ma, i b =1.0 ma i c = 30 ma, i b = 3.0 ma i c = 100 ma, i b = 10 ma i c = 10 ma, i b = 1.0 ma, t a = -55oc i c = 10 ma, i b = 1.0 ma, t a = 125oc v be(sat) 0.7 ? 0.8 ? 0.59 0.85 0.9 1.2 1.02 ? volts frequency transition v ce = 20v, i c = 20ma, f= 100 mhz f t 500 1000 mhz output capacitance v ce = 5 v, f= 1 mhz c ob ? 4.0 pf input capacitance v ce = 0.5 v, f= 1 mhz c ib ? 5.0 pf switching times test circuit per mil-prf-19500/317 t on t off t s ? ? 12 18 13 ns notes: 1 / for ordering information, price, and availability contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @ 25oc. 5 / pulse test: pulse width= 300sec, duty cycle= 2% available part numbers: sft2369a2gw pin assignment package pin 1 pin 2 pin 3 pin 4 pin 5 pin 6 gw collector1 base1 emitter1 collector2 base2 emitter2 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0045b doc
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