2sK3563 tent a t ive toshiba field effect tr ansisto r silicon n chann el mos type ( -mos ) 2sK3563 unit switching regulator applications ? ? ? ? low dra i n-s o u rce on res i s t ance: r ds (on ) = 1.35 (typ.) hig h forwar d tr an sfer admit t an c e : |y fs | = 3.5s (ty p .) low leakag e cu r r e n t : i ds s = 100 a ( v ds = 500 v) enha ncement- mode: v th = 2.0~4.0 v (v ds = 10 v , i d = 1 ma) maximum ratings (t a = 25c) c h a r a c t e r i s t i c s s y m b o l r a t i n g u n i t drain-source volt age v dss 5 0 0 v drain-gate voltag e (r gs = 20 k ? ) v dgr 5 0 0 v gate-sou rce voltage v gss 3 0 v dc (note 1 ) i d 5 drain current pulse (t = 1 ms) (note 1 ) i dp 20 a drain po w e r dissipation (tc = 25 c ) p d 3 5 w single pulse avalanche energ y ( n o t e 2 ) e as 1 8 0 m j avalanche current i ar 5 a repetitive avalanche energ y (note 3 ) e ar 3 . 5 m j channel temper a t ure t ch 1 5 0 c storage tempe r a t ure ran ge t stg - 5 5 ~ 1 5 0 c 0.64 0 . 15 2.6 4.5 0. 2 1.1 1.1 0.69 0. 1 5 2.8max 12.5 min. 15.0 0. 3 3.9 3.0 3.2 0.2 10 0.3 2.54 0. 2 5 2.54 0. 2 5 2 3 1 2.7 0. 2 1. gate 2. drain 3. so u r ce D D D toshib a jeit a jedec thermal characteristics c h a r a c t e r i s t i c s s y m b o l m a x u n i t thermal resistan ce, channel to case r th ( c h- c) 3 . 5 7 c / w thermal resistan ce, channel to ambient r th ( c h-a) 6 2 . 5 c / w 2 3 note 1: pleas e use de vices on co ndit i ons that the ch ann el temper ature is be lo w 1 5 0 c. note 2: v dd = 90 v, t ch = 25c(i n itia l) , l = 12.2 mh, i ar = 5 a, r g = 25 ? 1 note 3: repetitiv e ratin g : pulse w i dth l i mited b y ma xi mum chan nel t e mperat ure t h is transistor is an electrostat i c sensit ive dev ice. pleas e ha ndle w i t h cauti on. 2003-01-27 1
2sK3563 electrical characteristics (t a 25c) c h a r a c t e r i s t i c s s y m b o l t e s t c o n d i t i o n m i n t y p . m a x u n i t gate leakage cur r ent i gss v gs r 25 v, v ds 0 v r 10 p a gate-sou rce bre a kdow n voltage v (br) gss i d r 10 p a, v gs 0 v r 30 v drain cut-off cur r ent i dss v ds 500 v, v gs 0 v 1 0 0 p a drain-source b r e a kdow n voltage v (br) dss i d 10 ma, v gs 0 v 500 v gate th reshold voltage v th v ds 10 v, i d 1 ma 2.0 4 . 0 v drain-source on resistance r ds (on) v gs 10 v, i d 2.5 a 1 . 3 5 1 . 5 0 : for w a r d tr ansfer admittance y fs v ds 10 v, i d 2.5 a 1.5 3.5 s input capacitance c iss 5 5 0 reverse transfer capacitance c rss 7 output capacitan ce c oss v ds 25 v, v gs 0 v, f 1 mhz 70 pf rise time t r 10 turn -on ti me t on 20 f a ll time t f 10 sw itching time turn -off time t off 5 0 ns total gate charg e q g 16 gate-sou rce cha r ge q gs 10 gate-drain charg e q gd v dd a 400 v, v gs 10 v, i d a 6 nc r l 90 : a dut y 1%, t w 10 p s 15 : v out i d 2.5 a v dd 225 v 0 v 10 v v gs source-dr ain ratings and characteristic s (t a 25c) c h a r a c t e r i s t i c s s y m b o l t e s t c o n d i t i o n m i n t y p . m a x u n i t continuous drain reverse curren t (note 1 ) i dr 5 a pulse drain rever s e current (note 1 ) i drp 2 0 a for w a r d voltage (diode) v dsf i dr 5 a, v gs 0 v 1.7 v rever s e r e covery time t rr 1 4 0 0 n s reverse recover y charge q rr i dr 5 a, v gs 0 v, di dr /dt 10 0 a/ p s 9 p c marking lot numb er month (s t a rting from alphabet a) y ear (l ast nu mber of the ch ristian era) k356 3 t ype * 2003-01-27 2
2sK3563 tent a t ive 2003-01-27 3 x x r s . x x restri cti o ns on p r od uct u se 000 707 ea a t o shiba is co ntinu a ll y w o rk i ng to improv e the qu alit y an d relia bil i t y of its prod ucts. neve rtheless, semic ond uctor devices in gen eral ca n ma lfu n ction or fail d ue to the i r in h e rent e l ectrica l sensitivit y and vuln erab ilit y t o ph ys ical stress. it is the respons ibi lit y of t he bu yer, w h en uti lizin g t o shiba products , to compl y w i th the sta ndar ds o f safet y i n maki ng a safe d e si gn for the entir e s y stem, an d to avoid situ ati ons in w h ich a malfunctio n or failure of such t o shiba products cou l d cause loss of huma n life, bo dil y in jur y or d a m age to pro per t y . in devel op ing your des ig ns, pl ease e n sur e th at t o shiba products ar e use d w i thi n s pec ifi ed op erati ng ra nges as set forth in the most recent t o shi ba pro ducts specifica t ions. also, pl ease keep in mind the preca u t ions an d conditi ons set forth in the ?handl in g guide for semicon d u c tor devices,? or ?t oshiba semicon ductor relia bil i t y hand bo ok? etc.. t he t o shiba products liste d in this docu m ent are inte nde d for usag e in gen eral electro n ics ap plicati ons (computer, p e r s onal eq uipm e n t, office eq uip m ent, measur i ng e qui pment, industri a l r oboti cs, domestic a ppli anc es, etc.). t hese t o shiba products are neith er intend ed n o r w a rr ante d for usage i n equipm ent that requires extra o rdi nari l y high qua lit y an d/or relia bil i t y or a malfunc ti o n or failur e of w h ich ma y c a u s e loss of hum an life or bodi l y in jur y (? uninte nd ed us age?). un inten ded us age i n c l ude atomic e nerg y co ntrol i n struments, air p lan e or spaces hip i n st ruments, trans portatio n instr u ments, traffic signa l instruments, combusti on contro l i n struments, medica l instru ments, all t y p e s of safet y d e vices, et c.. uninte nde d usa ge of t o shiba products list ed in this docum ent shal l be made at th e customer?s o w n r i sk. t he information contain ed h e rein is pres e n ted onl y as a guid e for the app licati o n s of our products. no respo n sib ilit y i s assumed b y toshiba corporat ion for an y i n fring e m ents of intel l e ctual pr op ert y or other rights of the third parties w h i c h ma y re su lt from its use. n o licens e is grant ed b y impl i c ation or other w i se un der an y inte llectu a l propert y or oth e r right s of t o shiba corporat ion or o t h e t he informatio n contai ned he rein is su bject to chan ge w i th o u t notice.
|
