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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD557 description high current capability collector-emitter breakdown voltage- : v (br)ceo = 140v(min.) high collector power dissipation applications designed for high power audio amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 140 v v ceo collector-emitter voltage 140 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 20 a p c collector power dissipation @t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD557 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 0.2a; i b = 0 140 v v ce (sat)-1 collector-emitter saturation voltage i c = 10a; i b = 1a 1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 16a; i b = 4a 2.0 v v be (on) base-emitter on voltage i c = 8a; v ce = 2v 1.5 v i cbo collector cutoff current v cb = 140v; i e = 0 2.0 ma i ebo emitter cutoff current v eb = 7v; i c = 0 5.0 ma h fe dc current gain i c = 5a; v ce = 4v 30 isc website www.iscsemi.cn |
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