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inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor PMD17K100 description high dc current gain collector-emitter sustaining voltage- v ceo(sus) = -100v(min) complement to type pmd16k100 applications designed for general purpose amplifier and low frequency switching applications absolute maximum ratings(t c =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5.0 v i c collector current -continuous -20 a i cp collector current-peak -40 a i b b base current -0.5 a p c collector power dissipation@t c =25 200 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermalresistance, junction to case 0.875 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor PMD17K100 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -100ma; i b = 0 b -100 v v ce (sat) collector-emitter saturation voltage i c = -10a; i b = -40ma -2.0 v v be (sat) base-emitter saturation voltage i c = -10a; i b = -40ma -2.8 v v be (on) base-emitter on voltage i c = -10a; v ce = -3v -2.8 v i cer collector cutoff current v ce = -100v; r be = 1k v ce = -100v; r be = 1k , t c =150 -1.0 -5.0 ma i ebo emitter cut-off current v eb = -5v; i c = 0 -2.0 ma h fe dc current gain i c = -10a; v ce = -3v 800 20000 f t current-gain?bandwidth product i c = -7a; v ce = -3v, f= 1khz 4 mhz c ob output capacitance i e = 0; v cb = -10v; f test = 1.0mhz 400 pf isc website www.iscsemi.cn 2

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Price & Availability of PMD17K100

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD17K100 07R8808	Solid State Devices Inc (SSDI)	Bjt, Pnp, -100V, To-3; Transistor Polarity:Pnp; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V; Power Dissipation:225W Rohs Compliant: Yes \|Solid State PMD17K100	1: USD4.09	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD17K100 2383-PMD17K100-ND	Solid State Inc	TRANS PNP DARL 100V 20A TO3		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD17K100 70911438	Solid State Manufacturing	NPN-SILICON 20Amp Darlington TO-3 \| Solid State Manufacturing PMD17K100	10: USD4.13 50: USD3.92 100: USD3.72 200: USD3.51	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD17K100	TDK-Lambda Corporation		176: USD2.5715 87: USD2.7177 41: USD2.9271 14: USD3.136 5: USD4.0768 1: USD6.272	215

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD17K100		Bipolar Junction Transistor, Darlington, PNP Type, TO-3	6: USD3.75 2: USD5 1: USD7.5	9
PMD17K100	TDK-Lambda Corporation	Bipolar Junction Transistor, Darlington, PNP Type, TO-3	6: USD3.75 2: USD5 1: USD7.5	8
PMD17K100	TDK-Lambda Corporation	Bipolar Junction Transistor, Darlington, PNP Type, TO-3	129: USD3.64 49: USD3.92 1: USD8.4	172

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD-17K-100	Solid State Devices Inc (SSDI)			128

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