unisonic technologies co., ltd ut9435hz preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r502-740.a p-channel enhancement mode ? description the utc ut9435hz is a p-channel enhancement power mosfet. it has low gate charge, fa st switching speed and perfect r ds(on) . this device is generally applied in power management applications. ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 12345 6 7 8 ut9435hzl-s08-r UT9435HZG-S08-R sop-8 sss gd d d d tape reel ut9435hzl-s08-t ut9435hzg-s08-t sop-8 sss gd d d d tube note: pin assignment: g: gate d: drain s: source ut3435hzl -s08 -r (1) packing type (2) package type (3) lead free (1) r: tape reel, t: tube (2) s08: sop-8 (3) g: halogen free, l: lead free
ut9435hz preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-740.a ? pin configuration
ut9435hz preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-740.a ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain to source voltage v dss -30 v gate to source voltage v gss 20 v continuous drain current (note 3) i d 5.3 a pulsed drain current (note 1, 2) i dm 20 a power dissipation p d 2.5 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 50 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -30 v drain-source leakage current i dss v ds =-30v,v gs =0v -1 a gate-source leakage current i gss v ds =0v ,v gs =20v 5 a on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -1 -3 v drain-source on-state resistance (note 2) r ds(on) v gs =-10v,i d =-5.3a 44 50 m ? v gs =-4.5v, i d =-4.2a 74 90 m ? on state drain current i d ( on ) v ds =-5v, v gs =-10v -20 v dynamic parameters input capacitance c iss v ds =-15v,v gs =0v, f=1.0mhz 1040 pf output capacitance c oss 420 pf reverse transfer capacitance c rss 150 pf switching parameters total gate charge (note 2) q g v ds =-15v,v gs =-10v, i d =-4.6a 22.5 29 nc gate-source charge q gs 2 nc gate-drain charge q gd 6 nc turn-on delay time (note 2) t d ( on ) v dd =-15v, i d =-1a, v gen =-10v, r g =6 ? , 19 26 ns turn-on rise time t r 9 13 ns turn-off delay time t d ( off ) 74 105 ns turn-off fall time t f 36 50 ns source- drain diode ratings and characteristics drain-source diode forward voltage (note 2) v sd v gs =0v, i s =-5.3a -0.84 -1.3 v notes: 1. pulse width limited by t j ( max ) . 2. pulse width 300 s, duty cycle 2%. 3. surface mounted on 1in 2 copper pad of fr4 board
ut9435hz preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-740.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior wr itten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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