zener diode edzv series ? applications ? dimensions (unit : mm) ?land size figure (unit : mm) constant voltage control ? features 1) compact,2-pin mini-mold type for high-density mounting.(emd2) 2) high reliability. 3) can be mounted automatically, using chip mounter. ? structure ? construction silicon epitaxial planar ? taping dimensions (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit pmw tj c tstg c topr c junction temperature 150 operating temperature ? 55 to ? 150 parameter limits storage temperature ? 55 to ? 150 power dissipation 150 emd2 0.8 1.7 0.6 rohm : emd2 jeita : sc-79 jedec :sod-523 0.120.05 0.60.1 0.30.05 0.80.05 1.20.05 1.60.1 ex. edzv3.6b dot (year week factory) 1/5 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
edzv series ? electical characteristics (ta=25c) min. max. iz(ma) max. iz(ma) max. iz(ma) max. v r (v) edzv 3.6b 3.600 3.845 5.0 100 5.0 1000 1.0 10.0 1.0 edzv 3.9b 3.890 4.160 5.0 100 5.0 1000 1.0 5.0 1.0 edzv 4.3b 4.170 4.430 5.0 100 5.0 1000 1.0 5.0 1.0 edzv 4.7b 4.550 4.750 5.0 100 5.0 800 0.5 2.0 1.0 edzv 5.1b 4.980 5.200 5.0 80 5.0 500 0.5 2.0 1.5 edzv 5.6b 5.490 5.730 5.0 60 5.0 200 0.5 1.0 2.5 edzv 6.2b 6.060 6.330 5.0 60 5.0 100 0.5 1.0 3.0 edzv 6.8b 6.650 6.930 5.0 40 5.0 60 0.5 0.5 3.5 edzv 7.5b 7.280 7.600 5.0 30 5.0 60 0.5 0.5 4.0 edzv 8.2b 8.020 8.360 5.0 30 5.0 60 0.5 0.5 5.0 edzv 9.1b 8.850 9.230 5.0 30 5.0 60 0.5 0.5 6.0 edzv 10b 9.770 10.210 5.0 30 5.0 60 0.5 0.1 7.0 edzv 11b 10.760 11.220 5.0 30 5.0 60 0.5 0.1 8.0 edzv 12b 11.740 12.240 5.0 30 5.0 80 0.5 0.1 9.0 edzv 13b 12.910 13.490 5.0 37 5.0 80 0.5 0.1 10.0 edzv 15b 14.340 14.980 5.0 42 5.0 80 0.5 0.1 11.0 edzv 16b 15.850 16.510 5.0 50 5.0 80 0.5 0.1 12.0 edzv 18b 17.560 18.350 5.0 65 5.0 80 0.5 0.1 13.0 edzv 20b 19.520 20.390 5.0 85 5.0 100 0.5 0.1 15.0 edzv 22b 21.540 22.470 5.0 100 5.0 100 0.5 0.1 17.0 edzv 24b 23.720 24.780 5.0 120 5.0 120 0.5 0.1 19.0 edzv 27b 26.190 27.530 2.0 150 2.0 150 0.5 0.1 21.0 edzv 30b 29.190 30.690 2.0 200 2.0 200 0.5 0.1 23.0 edzv 33b 32.150 33.790 2.0 250 2.0 250 0.5 0.1 25.0 edzv 36b 35.070 36.870 2.0 300 2.0 300 0.5 0.1 27.0 (1) the zener voltage(vz) is measured 40ms after power is supplied. (2) the operating resistances(zz,zzk) are measured by superimposing a minute alternating current on the regulated current(iz) ? marking (type no.) type type no. type type no. edzv 3.6b 62 edzv 12b 25 edzv 3.9b 72 edzv 13b 35 edzv 4.3b 82 edzv 15b 45 edzv 4.7b 92 edzv 16b 55 edzv 5.1b a2 edzv 18b 65 edzv 5.6b c2 edzv 20b 75 edzv 6.2b e2 edzv 22b 85 edzv 6.8b f2 edzv 24b 95 edzv 7.5b h2 edzv 27b a5 edzv 8.2b j2 edzv 30b c5 edzv 9.1b l2 edzv 33b e5 edzv 10b 05 edzv 36b f5 edzv 11b 15 rising operataing resistance zz(?) reverse current i r ( p a) typ. symbol zener voltage vz(v) operating resistance zz(?) 2/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
edzv series 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 power dissipation:pd(mw) time:t(ms) prsm-time characteristics temp.coefficience: z(%/c) zener voltage vz(v) z-vz characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (c/w) reverse surge maximum power:prsm(w) 0 50 100 150 200 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 0 5 10 15 20 25 30 35 40 24 20 18 16 15 13 12 11 10 9.1 6.2 5.1 36 33 22 30 27 3.6 8.2 7.5 5.6 6.8 4.7 4.3 3.9 zener current:iz(ma) zener voltage:vz(v) vz-iz characteristics -0.08 -0.06 -0.04 -0.02 0 0.02 0.04 0.06 0.08 0.1 0 10203040 -5 0 5 10 15 20 25 30 35 40 ambient temperature:ta(c) pd-ta characteristics temp.coefficience: z(mv/c) t prsm 1pulse input waveform mounted on epoxy board %/c mv/c 3/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
edzv3.6b 0.001 0.01 0.1 1 10 0 1 2 3 4 5 ta= - 25 c ta=125 c ta=75 c ta=25 c zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics 0.001 0.01 0.1 1 10 100 1000 10000 0 0.5 1 1.5 ta=125 c ta=25 c ta=75 c reverse voltage v r (v) v r - i r characteristics reverse current:i r (na) 1 10 100 0 0.2 0.4 0.6 0.8 1 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 3.5 3.6 3.7 3.8 3.9 4.0 vz disresion map zener voltage:vz( ) ave:3.661v ta=25 c i z =5ma n=30pcs 100 110 120 130 140 150 160 170 180 190 200 ave:142.3na i r disresion map ta=25 c v r =1.0v n=30pcs reverse current:i r (na) 55 56 57 58 59 60 61 62 63 64 65 ct disresion map capacitance between terminals:ct(pf) ave:61.36pf ta=25 c f=1mhz v r =0v n=10pcs 4/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
edzv3.6b 10 100 1000 10000 0.1 1 10 zener current(ma) zz - iz characteristics dynamic impedance:zz( ) 0 5 10 15 20 25 30 no break at 30kv no break at 30kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 15.5kv esd dispersion map electrostatic discharge test esd [kv] 5/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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