features trenchfet power mosfets new low thermal resistance powerpak package with low 1.07-mm profile applications battery and load switching - notebook computers - notebook battery packs si7447dp vishay siliconix new product document number: 71970 s-21475?rev. a, 26-aug-02 www.vishay.com 1 p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) -30 0.006 @ v gs = -10 v -24 d s g p-channel mosfet 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds -30 gate-source voltage v gs 25 v a t a = 25 c -24 -14 continuous drain current (t j = 150 c) a t a = 70 c i d -19 -1 1 pulsed drain current i dm -60 a continuous source current (diode conduction) a i s -4.5 -1.6 t a = 25 c 5.4 1.9 maximum power dissipation a t a = 70 c p d 3.4 1.2 w operating junction and storage temperature range t j , t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 sec 18 23 maximum junction-to-ambient a steady state r thja 50 65 c/w maximum junction-to-case (drain) steady state r thjc 1.0 1.5 c/w notes a. surface mounted on 1? x 1? fr4 board.
si7447dp vishay siliconix new product www.vishay.com 2 document number: 71970 s-21475 ? rev. a, 26-aug-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = -250 a -1.0 -3.0 v v ds = 0 v, v gs = 20 v 100 gate-body leakage i gss v ds = 0 v, v gs = 25 v 200 na v ds = -24 v, v gs = 0 v -1 zero gate voltage drain current i dss v ds = -24 v, v gs = 0 v, t j = 70 c -10 a on-state drain current a i d(on) v ds = -5 v, v gs = -10 v -30 a drain-source on-state resistance a r ds(on) v gs = -10 v, i d = -24 a 0.0047 0.006 forward transconductance a g fs v ds = -15 v, i d = -24 a 50 s diode forward voltage a v sd i s = -2.9 a, v gs = 0 v -0.71 -1.1 v dynamic b total gate charge q g 113 170 gate-source charge q gs v ds = -15 v, v gs = -10 v, i d = -24 a 17 nc gate-drain charge q gd 32.5 turn-on delay time t d(on) 25 40 rise time t r v dd = -15 v, r l = 15 20 30 turn-off delay time t d(off) v dd = -15 v, r l = 15 i d -1 a, v gen = -10 v, r g = 6 180 270 ns fall time t f 130 200 gate resistance r g 4 source-drain reverse recovery time t rr i f = -2.9 a, di/dt = 100 a/ s 100 150 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 10 20 30 40 50 60 012345 v gs = 10 thru 5 v 25 c t c = 125 c -55 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 3 v 4 v
si7447dp vishay siliconix new product document number: 71970 s-21475 ? rev. a, 26-aug-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.004 0.008 0.012 0.016 0.020 0246810 0.000 0.002 0.004 0.006 0.008 0.010 0 1020304050 0 2 4 6 8 10 0 20 40 60 80 100 120 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 0 2000 4000 6000 8000 10000 0 6 12 18 24 30 c rss c oss c iss v ds = 15 v i d = 24 a v gs = 10 v i d = 24 a gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 1.0 1.2 0.1 10 100 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s i d = 24 a on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v) v gs = 10 v 1
si7447dp vishay siliconix new product www.vishay.com 4 document number: 71970 s-21475 ? rev. a, 26-aug-02 typical characteristics (25 c unless noted) -0.4 -0.2 0.0 0.2 0.4 0.6 -50 -25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j - temperature ( c) 0 120 200 40 80 power (w) single pulse power time (sec) 160 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 110 0.1 0.01 0.001 safe operating area v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t c = 25 c single pulse - drain current (a) i d 0.1 limited by r ds(on) dc 1 ms 10 ms 100 ms 1 s 10 s
si7447dp vishay siliconix new product document number: 71970 s-21475 ? rev. a, 26-aug-02 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance
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