tds.11.. vishay semiconductors 1 (9) rev. a3, 05-oct-00 www.vishay.com document number 83124 standard 7 segment display 7 mm color type circuitry red tdsr115. common anode red tdsr116. common cathode orange red tdso115. common anode orange red tdso116. common cathode yellow tdsy115. common anode green tdsg115. common anode green tdsg116. common cathode description the tds.11.. series are 7 mm character seven seg- ment led displays in a very compact package. the displays are designed for a viewing distance up to 3 meters and available in four bright colors. the grey package surface and the evenly lighted untinted seg- ments provide an optimum on-off contrast. all displays are categorized in luminous intensity groups. that allows users to assemble displays with uniform appearence. typical applications include instruments, panel me- ters, point-of-sale terminals and household equipment. features evenly lighted segments grey package surface untinted segments luminous intensity categorized yellow and green categorized for color wide viewing angle suitable for dc and high peak current 96 11506 applications panel meters test- and measure- equipment point-of-sale terminals control units
tds.11.. vishay semiconductors 2 (9) rev. a3, 05-oct-00 www.vishay.com document number 83124 absolute maximum ratings t amb = 25 c, unless otherwise specified tdsr115. / tdsr116. , tdso115. / tdso116. , tdsy115. tdsg115. / tdsg116. , / parameter test conditions type symbol value unit reverse voltage per segment or dp v r 6 v dc forward current per tdsr115./116. i f 25 ma segment or dp tdso115./116. i f 17 ma tdsy115. i f 17 ma tdsg115./116. i f 17 ma surge forward current per t p 10 s tdsr115./116. i fsm 0.5 a g segment or dp p (non repetitive) tdso115./116. i fsm 0.15 a tdsy115. i fsm 0.15 a tdsg115./116. i fsm 0.15 a power dissipation t amb 45 c p v 400 mw junction temperature t j 100 c operating temperature range t amb 40 to + 85 c storage temperature range t stg 40 to + 85 c soldering temperature t 3 sec, 2mm below seating plane t sd 260 c thermal resistance led junction/ambient r thja 140 k/w optical and electrical characteristics t amb = 25 c, unless otherwise specified red ( tdsr115. , tdsr116. ) parameter test conditions type symbol min typ max unit luminous intensity per segment (digit average) 1) i f = 10 ma tdsr1150/1160 i v 180 cd dominant wavelength i f = 10 ma d 645 nm peak wavelength i f = 10 ma p 660 nm angle of half intensity i f = 10 ma j 50 deg forward voltage per segment or dp i f = 20 ma v f 1.6 2 v reverse voltage per segment or dp i r = 10 a v r 6 15 v 1) i vmin and i v groups are mean values of segments a to g
tds.11.. vishay semiconductors 3 (9) rev. a3, 05-oct-00 www.vishay.com document number 83124 orange red ( tdso115. , tdso116. ) parameter test conditions type symbol min typ max unit luminous intensity per segment (digit average) 1) i f = 10 ma tdso 1150/1160 i v 450 cd dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 630 nm angle of half intensity i f = 10 ma j 50 deg forward voltage per segment or dp i f = 20 ma v f 2 3 v reverse voltage per segment or dp i r = 10 a v r 6 15 v 1) i vmin and i v groups are mean values of segments a to g yellow ( tdsy115. ) parameter test conditions type symbol min typ max unit " 1) f tdsy1150 i v 450 cd ! f d 581 594 nm
! f p 585 nm " f j 50 deg
!
f v f 2.4 3 v
r v r 6 15 v 1) vmin v green ( tdsg115. , tdsg116. ) parameter test conditions type symbol min typ max unit luminous intensity per segment (digit average) 1) i f = 10 ma tdsg 1150/1160 i v 450 cd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma j 50 deg forward voltage per segment or dp i f = 20 ma v f 2.4 3 v reverse voltage per segment or dp i r = 10 a v r 6 15 v 1) i vmin and i v groups are mean values of segments a to g
tds.11.. vishay semiconductors 4 (9) rev. a3, 05-oct-00 www.vishay.com document number 83124 typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 100 200 300 400 500 p power dissipation ( mw ) v t amb ambient temperature ( c ) 100 95 11477 figure 1. power dissipation vs. ambient temperature 0 5 10 15 20 30 020406080 i forward current ( ma ) f t amb ambient temperature ( c ) 100 95 11478 25 red figure 2. forward current vs. ambient temperature 0.4 0.2 0 0.2 0.4 0.6 95 10082 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i relative luminous intensity v rel figure 3. rel. luminous intensity vs. angular displacement 1 1.5 2 2.5 3 95 10073 0.1 1 10 100 1000 i forward current ( ma ) f v f forward voltage ( v ) red t p /t=0.001 t p =10 s figure 4. forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10074 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) red i f =10ma figure 5. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10075 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 red i fav =10ma, const. figure 6. rel. lumin. intensity vs. forw. current/duty cycle
tds.11.. vishay semiconductors 5 (9) rev. a3, 05-oct-00 www.vishay.com document number 83124 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10076 i relative luminous intensity v rel red figure 7. relative luminous intensity vs. forward current 620 640 660 680 700 0 0.2 0.4 0.6 0.8 1.2 720 95 10077 i relative luminous intensity v rel wavelength ( nm ) 1.0 red figure 8. relative luminous intensity vs. wavelength 02468 0.1 1 10 100 1000 10 95 10086 v f forward voltage ( v ) i forward current ( ma ) f t p /t=0.001 t p =10 s orange-red figure 9. forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10087 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) orange-red i f =10ma figure 10. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10088 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 orange-red i fav =10ma, const. figure 11. rel. lumin. intensity vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10089 i relative luminous intensity v rel orange-red figure 12. relative luminous intensity vs. forward current
tds.11.. vishay semiconductors 6 (9) rev. a3, 05-oct-00 www.vishay.com document number 83124 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10090 i relative luminous intensity v rel wavelength ( nm ) 1.0 orange-red figure 13. relative luminous intensity vs. wavelength 02468 0.1 1 10 100 1000 10 95 10030 v f forward voltage ( v ) i forward current ( ma ) f yellow t p /t=0.001 t p =10 s figure 14. forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10031 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) yellow i f =10ma figure 15. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10260 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 yellow figure 16. rel. lumin. intensity vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10033 i relative luminous intensity v rel yellow figure 17. relative luminous intensity vs. forward current 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 i relative luminous intensity v rel wavelength ( nm ) 1.0 yellow figure 18. relative luminous intensity vs. wavelength
tds.11.. vishay semiconductors 7 (9) rev. a3, 05-oct-00 www.vishay.com document number 83124 02468 0.1 1 10 100 1000 10 95 10034 v f forward voltage ( v ) i forward current ( ma ) f t p /t=0.001 t p =10 s green figure 19. forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10035 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) i f =10ma green figure 20. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i specific luminous intensity i f forward current ( ma ) figure 21. specific luminous intensity vs. forward current 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10037 i relative luminous intensity v rel green figure 22. relative luminous intensity vs. forward current 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 i relative luminous intensity v rel wavelength ( nm ) 1.0 green figure 23. relative luminous intensity vs. wavelength
tds.11.. vishay semiconductors 8 (9) rev. a3, 05-oct-00 www.vishay.com document number 83124 dimensions in mm 95 11342 pin connections a f e g d c b dp 12 345 109 876 1e 2d 3 a ( c ) 4c 5dp 6b 7a 8 a ( c ) 9g 10 f 96 11677
tds.11.. vishay semiconductors 9 (9) rev. a3, 05-oct-00 www.vishay.com document number 83124 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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