 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB689 description collector-emitter breakdown voltage- : v (br)ceo = -100v(min) high power dissipation wide area of safe operation applications designed for low frequency power amplifier and tv vertical deflection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -4 v i c collector current-continuous -4 a i cm collector current-peak -5 a total power dissipation @ t a =25 1.8 p c total power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -45~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB689 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -10ma; r be = -100 v v (br)ebo emitter-base breakdown voltage i e = -1ma; i c = 0 -4 v v ce (sat) collector-emitter saturation voltage i c = -1a; i b = -0.1a b -1.0 v i ceo collector cutoff current v ce = -80v; r be = -100 a i ebo emitter cutoff current v eb = -3.5v; i c = 0 -50 a h fe-1 dc current gain i c = -0.5a; v ce = -4v 50 250 h fe-2 dc current gain i c = -50ma; v ce = -4v 25 350 isc website www.iscsemi.cn 2 |
Price & Availability of 2SB689
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |