transistor (npn) features ? low collector capacitance ? high gain m aximum r at ings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 40 v v ceo collector - emitter voltage 25 v v ebo emitter - base voltage 5 v i c collector current 50 m a p c collector power dissipation 200 m w r ja thermal resistance from j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 50 a , i e =0 40 v collector - emitter breakdown voltage v (br) c e o i c = 1 ma, i b =0 25 v emitter - base breakdown voltage v (br)eb o i e = 5 0 a , i c =0 5 v collector cut - off current i cbo v cb = 24 v, i e =0 5 00 n a emitter cut - off current i ebo v eb = 3 v, i c =0 5 00 n a dc current gain h fe v ce = 6 v, i c = 1 ma 56 270 collector - emitter saturation voltage v ce(sat) i c = 1 0m a, i b = 1 ma 0.3 v transition frequency f t v ce = 6 v,i c = 1 ma , f= 1 00 mhz 150 m hz collector output capacitance c ob v cb = 6 v, i e =0, f=1mhz 2.2 pf cl assification of h fe rank n p q range 56 C 120 82 C 180 120 C 270 marking an ap aq so t C 3 23 1. base 2. emitter 3. collector 1 www.htsemi.com semiconductor jinyu 2 s c40 98
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