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  MJD32C document number: ds31624 rev. 3 - 2 1 of 6 www.diodes.com may 2010 ? diodes incorporated MJD32C pnp surface moun t transistor features ? epitaxial planar die construction ? high collector-emittervoltage ? ideally suited for automated assembly processes ? ideal for power switching or amplification applications ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: to252-3l ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte ti n annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.34 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -5 v continuous collector current i c -3 a peak pulse collector current i cm -5 a continuous base current i b -1 a thermal characteristics characteristic symbol value unit power dissipation @t c = 25c p d 15 w thermal resistance, junction to case r jc 8.33 c/w power dissipation @t a = 25c (note 3) p d 1.5 w thermal resistance, junction to ambient r ja 80 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our websit e at http://www.diodes.com/p roducts/lead_free/index.php. 3. device mounted on fr-4 pcb with minimum recommended pad layout. top view device schematic pin out configuration collector base emitter 3 1 2 4
MJD32C document number: ds31624 rev. 3 - 2 2 of 6 www.diodes.com may 2010 ? diodes incorporated MJD32C typical characteristics 100m 1 10 100 10m 100m 1 10 single pulse t amb =25c v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i c collector current (a) -v ce collector-emitter voltage (v) 0.1 1 10 100 0.01 0.1 1 10 single pulse t case =25c 1ms 10ms 100ms v ce(sat) limited 100 s dc safe operating area -v ce collector-emitter voltage (v) -i c collector current (a) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 t amb =25c minimum copper transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 0 2 4 6 8 d=0.5 d=0.2 d=0.1 d=0.05 single pulse t case =25c transient thermal impedance pulse width (s) thermal resistance (c/w)
MJD32C document number: ds31624 rev. 3 - 2 3 of 6 www.diodes.com may 2010 ? diodes incorporated MJD32C electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test conditions off characteristics (note 4) collector-emitter sustaining voltage v ( sus ) ceo -100 ? ? v i c = -30ma, i b = 0 collector cut-off current i ceo ? ? -50 a v cb = -60v, i b = 0 collector cut-off current i ces ? ? -20 a v ce = -100v, v eb = 0 emitter cut-off current i ebo ? ? -1.0 ma v eb = -5.0v, i c = 0 on characteristics (note 4) collector-emitter saturation voltage v ce ( sat ) ? ? -1.2 v i c = -3.0a, i b = -375ma base-emitter turn-on voltage v be ( on ) ? ? -1.8 v v ce = -4.0v, i c = -3a dc current gain h fe 25 10 ? ? 50 ? v ce = -4.0v, i c = -1a v ce = -4.0v, i c = -3a small signal characteristics current gain-bandwidth product f t 3.0 ? ? mhz i c = -500ma, v ce = -10v, f = 1mhz small signal current gain h fe 20 ? ? ? v ce = -10v, i c = -0.5a, f = 1khz notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. device mounted on fr-4 pcb with minimum recommended pad layout. 4. measured under pulsed conditions. pulse width = 300 s. duty cycle 2%. 0 0 p , power dissipation (mw) d t , ambient temperature ( c) a fig. 1 power dissipation vs. ambient temperature 0.5 1.0 1.5 2.0 25 50 75 100 125 150 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 2 typical dc current gain vs. collector current 10 100 1,000 h, d c c u r r en t g ain fe t = 150c a t = 25c a t = -55c a t = 85c a v = -4v ce
MJD32C document number: ds31624 rev. 3 - 2 4 of 6 www.diodes.com may 2010 ? diodes incorporated MJD32C 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 3 typical collector-emitter saturation voltage vs. collector current 0.001 0.01 0.1 1 -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) i/i = 8 cb t = 85c a t = 25c a t = -55c a t = 150c a 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 4 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.4 -v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) 1.2 t = 150c a t = 25c a t = -55c a t = 85c a v = -4v ce 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 5 typical base-emitter saturation voltage vs. collector current 0.2 0.4 0.6 0.8 1.0 1.2 -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) 0 t = 150c a t = 25c a t = -55c a t = 85c a i = 8 cb /i 10 100 1,000 0.1 1 10 100 v , reverse voltage (v) r fig. 6 typical capacitance characteristics c a p a c i t an c e (pf) c ibo c obo f = 1mhz ordering information (note 5) part number case packaging MJD32C-13 to252-3l 2500/tape & reel notes: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information MJD32C = product type marking code = manufacturers? code marking yyww = date code marking yy = last digit of year, (ex: 08 = 2008) ww = week code (01 ? 53) y yww MJD32C
MJD32C document number: ds31624 rev. 3 - 2 5 of 6 www.diodes.com may 2010 ? diodes incorporated MJD32C package outline dimensions suggested pad layout to252-3l dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 ? ? e ? ? 2.286 e 6.45 6.70 6.58 e1 4.32 ? ? h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 ? all dimensions in mm dimensions value (in mm) z 11.6 x1 1.5 x2 7.0 y1 2.5 y2 7.0 c 6.9 e1 2.3 b3 e 2x b2 d l4 a c2 e a1 l l3 3x b a h a2 e1 x2 c z x1 y1 e1 y2
MJD32C document number: ds31624 rev. 3 - 2 6 of 6 www.diodes.com may 2010 ? diodes incorporated MJD32C important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com


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Price & Availability of MJD32C
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Rochester Electronics

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TTI

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MJD32CAJ
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TME

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MJD32CQ-13
MJD32CQ-13		 Diodes Incorporated Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry 500: USD0.175
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MJD32C-13
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MJD32CUQ-13
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MJD32CG
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MJD32CT4G
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MJD32CT4
 STMicroelectronics MJD32C Series PNP 100 V 3A Surface Mount Low Voltage Power Transistor - TO-252-3 RFQ
6814

ComSIT USA

Part # Manufacturer Description Price BuyNow  Qty.
MJD32C1
 onsemi PNP POWER TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin RFQ
7150
MJD32CT4G
 onsemi COMPLEMENTARY POWER TRANSISTOR Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin RFQ
59
MJD32CTM
 Fairchild Semiconductor Corporation PNP EPITAXIAL SILICON TRANSISTOR Power Bipolar Transistor, 3A I(C), 1-Element, PNP RFQ
2500
MJD32CG
 onsemi Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin RFQ
28

Velocity Electronics

Part # Manufacturer Description Price BuyNow  Qty.
MJD32CT4G
 onsemi Our Stock RFQ
507

Chip 1 Exchange

Part # Manufacturer Description Price BuyNow  Qty.
MJD32CT4
 STMicroelectronics INSTOCK RFQ
2500
MJD32CT4G
 INSTOCK RFQ
5676
MJD32CT4G
 onsemi INSTOCK RFQ
7522

Avnet Silica

Part # Manufacturer Description Price BuyNow  Qty.
MJD32CT4
MJD32CT4		 STMicroelectronics Trans GP BJT PNP 100V 3A 3-Pin(2+Tab) TO-252 T/R (Alt: MJD32CT4) BuyNow
12500
MJD32CG
MJD32CG		 onsemi Trans GP BJT PNP 100V 3A 3-Pin(2+Tab) DPAK Rail (Alt: MJD32CG) BuyNow
5250
MJD32CRLG
MJD32CRLG		 onsemi Trans GP BJT PNP 100V 3A 3-Pin(2+Tab) DPAK T/R (Alt: MJD32CRLG) BuyNow
3600
MJD32CQ-13
MJD32CQ-13		 Diodes Incorporated Trans GP BJT PNP 100V 3A 3-Pin TO-252 T/R (Alt: MJD32CQ-13) BuyNow
2500
MJD32CUQ-13
MJD32CUQ-13		 Diodes Incorporated PWR MID PERF TRANSISTOR TO252 T&R 2.5K (Alt: MJD32CUQ-13) BuyNow
2500

Chip Stock

Part # Manufacturer Description Price BuyNow  Qty.
MJD32CG
 onsemi RFQ
2989

Chip1Stop

Part # Manufacturer Description Price BuyNow  Qty.
MJD32CRLG
C1S541900968091		 onsemi Trans GP BJT PNP 100V 3A 1560mW Automotive 3-Pin(2+Tab) DPAK T/R 1: USD0.29
 BuyNow
1600
MJD32CG
C1S541900168530		 onsemi Trans GP BJT PNP 100V 3A 1560mW Automotive 3-Pin(2+Tab) DPAK Tube 10: USD0.49
5: USD0.558
 BuyNow
40
MJD32CT4-A
C1S730201298071		 STMicroelectronics Bipolar Transistor (BJT) 5: USD0.167
 BuyNow
5310

Component Electronics, Inc

Part # Manufacturer Description Price BuyNow  Qty.
MJD32C
 Motorola Semiconductor Products IN STOCK SHIP TODAY 1000: USD0.75
100: USD0.87
1: USD1.15
 BuyNow
96
MJD32C
 onsemi IN STOCK SHIP TODAY 1000: USD0.75
100: USD0.87
1: USD1.15
 BuyNow
36
MJD32CT4
 Motorola Semiconductor Products IN STOCK SHIP TODAY 1000: USD0.75
100: USD0.87
1: USD1.15
 BuyNow
75
MJD32CT4
 onsemi IN STOCK SHIP TODAY 1000: USD0.75
100: USD0.87
1: USD1.15
 BuyNow
1850
MJD32CG
 onsemi IN STOCK SHIP TODAY 1000: USD1
100: USD1.15
1: USD1.54
 BuyNow
96

Flip Electronics

Part # Manufacturer Description Price BuyNow  Qty.
NJVMJD32CT4G
 onsemi Stock RFQ
479
NJVMJD32CG
 onsemi Stock, ship today 1: USD0.13
 RFQ
12425

New Advantage Corporation

Part # Manufacturer Description Price BuyNow  Qty.
MJD32CQ-13
 Diodes Incorporated 2500: USD0.2393
 BuyNow
2500
NJVMJD32CT4G
 onsemi 2500: USD0.2714
185000: USD0.2533
 BuyNow
185000
MJD32CAJ
 Nexperia 2500: USD0.1346
92500: USD0.1256
 BuyNow
92500
MJD32CRLG
 onsemi BIP DPAK PNP 3A 100V TR 1800: USD0.5477
3600: USD0.5068
 BuyNow
3600
MJD32CG
 onsemi DPAK 4/BIPOLAR POWER DPAK PNP 3A 100V 600: USD0.4201
4200: USD0.3887
 BuyNow
4200

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
MJD32C
 MFG UPON REQUEST RFQ
1352
MJD32C
 Fairchild Semiconductor Corporation RFQ
17
MJD32C
 STMicroelectronics RFQ
2184
NJVMJD32CT4G
 MFG UPON REQUEST RFQ
8422
MJD32CT4
 MFG UPON REQUEST RFQ
2278

South Electronics

Part # Manufacturer Description Price BuyNow  Qty.
MJD32CQ-13
 Diodes Incorporated MJD32CQ-13 RFQ
0
NJVMJD32CT4G
 onsemi NJVMJD32CT4G RFQ
0
MJD32CRL
 onsemi MJD32CRL RFQ
0
MJD32CT4
 STMicroelectronics MJD32CT4 RFQ
0
MJD32CT4G
 onsemi MJD32CT4G RFQ
0

Wuhan P&S

Part # Manufacturer Description Price BuyNow  Qty.
MJD32CG
 onsemi Complementary Power Transistors 1: USD0.7
100: USD0.45
500: USD0.37
1000: USD0.34
 BuyNow
75

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