sot-23(package) vds= 20v rds(on), vgs@ 4.5v, ids@ ? rds(on), vgs@ 2.5v, ids@ 2.0a features advanced trench process technology high density cell design for ultra low on-resistance package dimensions s g d maximum ratings and thermal characterist ics (ta = 25oc unless otherwise noted) XP151A13COMR ? 115m parameter symbol limit unit drain-source voltage v ds 20 gate-source voltage v gs 8 v continuous drain current i d 2.3 pulsed drain current 1) i dm 8 a ta = 25 o maximum power dissipation ta = 75 o c p d 0.8 w operating junction and storage temperature range t j , t stg -55 to 150 o c junction-to-ambient thermal resistance (pcb mounted) 3) 166 o c/w 1.25 2) junction-to-ambient thermal resistance (pcb mounted) 2) 100 r r thja notes pulse width limited by maximum junction temperature. surface mounted on fr4 board, t 5 sec. surface mounted on fr4 board. 1) 3.6a 2) 3) millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 1.90 ref. b 2.40 2.80 h 1.00 1.30 c 1.40 1.60 k 0.10 0.20 d 0.35 0.50 j 0.40 - e 0 0.10 l 0.85 1.15 f 0.45 0.55 m 0 10 millimeter 85m 20v n-channel enhancement mode mosfet 1 date:2011/05 www.htsemi.com semiconductor jinyu
electrical characteristics parameter test condition static drain-source breakdown voltage bv dss v gs = 0v, i d = 10ua 20 v drain-source on-state resistance v gs = 4.5v, i d = 3.6a 70 r ds(on) v gs = 2.5v, i d = 3.1a m ? gate threshold voltage v gs(th) v ds =v gs , i d = 250ua 0.6 v zero gate voltage drain current 0 v ds = 16v, v gs = 0v 1 gate body leakage i gss v gs = 8v, v ds = 0v 100 na forward transconductance g fs v ds = 5v, i d = 3.6a 10 s dynamic total gate charge q g 5.4 10 gate-source charge q gs 0.65 gate-drain charge q gd v ds = 10v, i d = 3.6a v gs = 4.5v 1.6 nc turn-on delay time t d(on) 12 25 turn-on rise time t r 36 60 turn-off delay time t d(off) 34 60 turn-off fall time t f v dd = 10v, rl=5.5 ? i d 3.6a,v gen = 4.5v r g = 6 10 25 ns input capacitance c iss 340 output capacitance c oss 115 reverse transfer capacitance c rss v ds = 10v, v gs = 0v f = 1.0 mhz 33 pf source-drain diode max. diode forward current i s diode forward voltage v sd i s = 1.6a, v gs = 0v pulse test: pulse width <= 300us, duty cycle<= 2% i dss ds = 20v, v gs = 0v tj=55 o c v 10 ua ? 85 85 115 1) 1) 1) symbol min. typ. miax. unit 1 . 6 a 1 . 2 v XP151A13COMR 20v n-channel enhancement mode mosfet 2 date:2011/05 www.htsemi.com semiconductor jinyu
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 on-resistance vs. drain current output characteristics transfer characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d 0 2 4 6 8 10 012345 t c = 125 c 55 c 0, 0.5, 1 v v gs = 5 thru 2.5 v 1.5 v 2 v 0 200 400 600 800 1000 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 0 50 100 150 0 1 2 3 4 5 01234567 0 0.03 0.06 0.09 0.12 0.15 0246810 gate charge gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 10 v i d = 3.6 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 4.5 v i d = 3.6 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 2.5 v v gs = 4.5 v 25 c XP151A13COMR 20v n-channel enhancement mode mosfet 3 date:2011/05 www.htsemi.com semiconductor jinyu
0.2 0.4 0.6 0.8 1.0 1.2 power (w) 0.4 0.3 0.2 0.1 0.0 0.1 0.2 50 0 50 100 150 0 0.04 0.08 0.12 0.16 0.20 02468 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance 30 on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) variance (v) v gs(th) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 i d = 3.6 a i d = 250 a 10 1 10 t j = 25 c t j = 150 c 0.01 0.10 1.00 10.00 time (sec) t c = 25 c single pulse 14 12 8 4 0 2 6 10 XP151A13COMR 20v n-channel enhancement mode mosfet 4 date:2011/05 www.htsemi.com semiconductor jinyu
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