inchange semiconductor isc product specification isc silicon pnp power transistor BD304 isc website www.iscsemi.cn description dc current gain - : h fe = 30(min.)@ i c = - 2a collector-emitter breakdown voltage- : v (br)ceo = -60v(min.) complement to type bd303 applications designed for audio output stages up to 25w, vertical deflection circuits in color tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current-continuous -8 a i cm collector current-peak -12 a i b b base current-continuous -2 a p c collector power dissipation @ t c =25 55 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.3 /w
inchange semiconductor isc product specification isc silicon pnp power transistor BD304 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = -200ma; i b = 0 -60 v v ce( sat ) collector-emitter saturation voltage i c = -3a; i b = -0.3a b -1.0 v v be( sat ) base-emitter saturation voltage i c = -3a; i b = -0.3a b -1.5 v i ceo collector cutoff current v ce = -30v; i b = 0 b -1.0 ma i cbo collector cutoff current v cb = -40v; i e = 0; t c = 150 -1.0 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -5.0 ma h fe dc current gain i c = -2a; v ce = -2v 30 f t current-gain?bandwidth product i c = -0.3a; v ce = -3v 3 mhz isc website www.iscsemi.cn 2
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