3/6/01 www.irf.com 1 irf7240 hexfet ? power mosfet these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications.. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering techniques. description l ultra low on-resistance l p-channel mosfet l surface mount l available in tape & reel pd- 93916 parameter max. units r q ja maximum junction-to-ambient ? 50 c/w thermal resistance absolute maximum ratings w top view 8 1 2 3 4 5 6 7 d d d g s a d s s v dss r ds(on) max i d -40v 0.015@v gs = -10v -10.5a 0.025@v gs = -4.5v -8.4a so-8 parameter max. units v ds drain- source voltage -40 v i d @ t a = 25c continuous drain current, v gs @ -10v -10.5 i d @ t a = 70c continuous drain current, v gs @ -10v -8.6 a i dm pulsed drain current ? -43 p d @t a = 25c power dissipation ? 2.5 p d @t a = 70c power dissipation ? 1.6 linear derating factor 20 mw/c v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c
irf7240 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -2.5a, v gs = 0v ? t rr reverse recovery time CCC 43 65 ns t j = 25c, i f = -2.5a q rr reverse recovery charge CCC 75 110 nc di/dt = -100a/s ? source-drain ratings and characteristics a -43 CCC CCC CCC -2.5 CCC s d g ? repetitive rating; pulse width limited by max. junction temperature. notes: ? pulse width 400s; duty cycle 2%. ? surface mounted on 1 in square cu board, t 5sec. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -40 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC -0.025 CCC v/c reference to 25c, i d = -1ma CCC CCC 0.015 v gs = -10v, i d = -10.5a ? CCC CCC 0.025 v gs = -4.5v, i d = -8.4a ? v gs(th) gate threshold voltage -1.0 CCC -3.0 v v ds = v gs , i d = -250a g fs forward transconductance 17 CCC CCC s v ds = -10v, i d = -10.5a CCC CCC -15 v ds = -32v, v gs = 0v CCC CCC -25 v ds = -32v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 v gs = -20v gate-to-source reverse leakage CCC CCC 100 v gs = 20v q g total gate charge CCC 73 110 i d = -10.5a q gs gate-to-source charge CCC 31 47 nc v ds = -20v q gd gate-to-drain ("miller") charge CCC 17 26 v gs = -10v t d(on) turn-on delay time CCC 52 CCC v dd = -20v ? t r rise time CCC 490 CCC i d = -1.0a t d(off) turn-off delay time CCC 210 CCC r g = 6.0 w t f fall time CCC 97 CCC v gs = -10v c iss input capacitance CCC 9250 CCC v gs = 0v c oss output capacitance CCC 580 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 520 CCC ? = 1.0khz electrical characteristics @ t j = 25c (unless otherwise specified) i gss a w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns
irf7240 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -10.5a 0.01 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -2.70v 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.70v 0.01 0.1 1 10 100 2.5 3.0 3.5 4.0 4.5 v = -25v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
irf7240 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source volta g e (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 1 10 100 -v ds , drain-to-source voltage (v) 0 4000 8000 12000 16000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate char g e (nc) -v , gate-to-source voltage (v) g gs i = d -10.5a v = -8v ds v = -20v ds v = -32v ds
irf7240 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms 25 50 75 100 125 150 0 2 4 6 8 10 12 t , case temperature ( c) -i , drain current (a) c d
irf7240 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 0 1020304050 -i d , drain current (a) 0.010 0.015 0.020 0.025 r ds (on) , drain-to-source on resistance ( w ) v gs = -10v v gs = -4.5v fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 0.0 4.0 8.0 12.0 16.0 -v gs, gate -to -source voltage (v) 0.010 0.015 0.020 0.025 0.030 0.035 r ds(on) , drain-to -source on resistance ( w ) i d = -10.5a
irf7240 www.irf.com 7 fig 15. typical vgs(th) variance vs. juction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 -v gs(th) , variace ( v ) i d = -250a fig 16. typical power vs. time 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 40 80 120 160 200 power (w)
irf7240 8 www.irf.com so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 01 2aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in millime t ers [inches ]. 5 dimens ion doe s not include mold prot rus ions . 6 dimens ion doe s not include mold prot rus ions . mol d prot rus ions not t o e xce ed 0.25 [.010]. 7 dimens ion is t he lengt h of lead f or s olde ring t o a s ubst rate. mol d prot rus ions not t o e xce ed 0.15 [.006]. 8x 1.78 [.070] example: t his is an irf7101 (mosfet ) internat ional rectifier logo f7101 yww xxxx part number lot code ww = week y = las t digit of t he ye ar dat e code (yww)
irf7240 www.irf.com 9 33 0.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conform s to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 3/01
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