SPT312 3000a, 4500v 100mm thyristor features package 3000a, 4500v a=5.375in, b=3.204in, c=0.792in, d=0.2902in 40ka pulse current capability notes - 1, 2 & 3 fast turn-off time light weight package description the SPT312 reverse blocking thyristor is suitable for inverter applications up to 200hz. the silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive eight (8) arms involute gate structure for lower switching losses. model rating availability the design utilizes the revolutionary "light silicon sandwich" or lss technology, part number v drm v rrm a new termination technique which eliminates heavy refractory metal as a SPT312hk 4500 4500 substrate but still employs the alloyed anode interface necessary for high surge SPT312hh 4400 4400 current duty. the light weight plastic package allows the insertion of liquid SPT312hf 4300 4300 cooled chillers closer to the silicon junction. copper inserts can be supplied for SPT312hd 4200 4200 adjoining commercially available flat surfaced heat dissipators. SPT312hb 4100 4100 SPT312ft 4000 4000 limiting characteristics and ratings at t j = 125 o c, unless otherwise specified symbol units repetitive peak off state voltage.................................................................................????????????? v drm 4500 v repetitive peak reverse voltage.....................................................................................???????????? v rrm 4500 v average on-state current (t c =70 o c) ...........................................................................???????????.. i t(av) 3000 a peak half-cycle non-repetitive surge current ( 8.3ms / 10ms ).................................................????. i tsm 40 / 37.5 ka for fusing ( 8.3ms / 10ms ) ????????????????????????????.. i 2 t 6.6 / 7 ma 2 s critical gate trigger voltage ( v d = 12v, t j = 25 o c )????????????????????????????.. v gt 4.5 v critical gate trigger current ( v d = 12v, t j = 25 o c ) ?????????????????????????????. i gt 300 ma non-trigger gate voltage ( v d = 2000v ) ????????????????????????????????????????????.. v gd 0.8 v non-trigger gate current ( v d = 2000v ) ????????????????????????????????????????????.. i gd 15 ma open circuit gate voltage ?????????????????????????????????????????????. v oc 50 v short circuit gate current ????????????????????????????????????????????? i ss 5 a gate pulse duration and rise time ??????????????????????????????????????? 10 m s duration / 0.5 m s rise time turn-off time (5a/ m s, >100v, 400v/ m s to 2000v) ?????????????????????????????????????????????????????????.. toff 400 m s turn-on delay (v d = 50%v drm ) ??????????...???????????????????????????????????????????????????????.. td 4 m s rate of change of voltage ( v d =70% v drm ) ............................................................................................???.. dv/dt 1000 v/ m s rate of change of current ( v d =50% v drm ) ??????................................................................? di/dt 300 a/ m s operating and storage temperature.......................................................................................?????????? t j , t stg 0 to +125 o c mounting force......................................................................................................................????????????.. f 13000-16000 lbs notes 1. optional external posts dwg. # 0215b8331; ni plated copper, 0.35" thick each. 2. compressed thickness including external posts is 0.88" - 0.89" (22.35mm - 22.61mm). 3. weight 14 oz., 2.7 lbs with posts. electrical specifications at t j = 125 o c, unless otherwise specified parameters symbol test conditions min typ max units peak off state blocking i drm v d = 80%v drm 450 ma forward & reverse current i rrm 350 ma on state voltage v tm i t = 4ka pulse 2.0 v max. peak recovery current i rm di/dt = 10a/ m s snap. s = .5-.33 310 a thermal resistance r q jc double side cooling 0.0049 o c/w c d d b a 175 great valley pkwy. malvern, pa 19355 usa SPT312.xls rev. 1 7/09/2001 www.datasheet.net/ datasheet pdf - http://www..co.kr/
typical performance curves figure 1. on-state current vs on-state voltage figure 2. thermal impedance vs power on time figure 3. peak i tsm vs pulse duration for half sine current figure 4. on-state energy vs on-state current figure 5. average full cycle power loss vs on-state current figure 6. peak i rec vs commutating di/dt 100 1000 10000 0 1 2 3 4 5 6 7 8 9 10 peak current, it (ka) average power (w) 0.1 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 10 11 peak current, it (ka) energy per pulse, (j) 1000 10000 100000 0 1 2 3 4 5 6 7 8 9 10 on-state voltage, vtm (v) on-state current, it (a) 10 100 1 10 surge duration (ms) peak surge current, itsm (ka) pulse width (us) 9000 7000 5000 2000 1000 750 500 250 tp 1/f applicable frequency range: 50 - 200hz 0.00001 0.0001 0.001 0.01 0.0001 0.001 0.01 0.1 1 10 100 power on-time (sec) zthj- ( o c/w) with copper inserts 0.0074 without copper inserts 0.0049 10 100 1000 10000 1 10 100 commutating di/dt (a/us) peak recovery current (a) 175 great valley pkwy. malvern, pa 19355 usa SPT312.xls rev. 1 7/09/2001 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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