p r o d u c t i n n o v a t i o n f r o m PA97DR PA97DRu features ? high voltage 900v (450v) ? low quiescent current 600a ? high output current 10 ma applications ? mass spectrometers ? scanning coils ? high voltage instrumentation ? programmable power supplies up to 880v ? semiconductor measurement equip - ment power operational amplifiers PA97DR p r o d u c t i n n o v a t i o n f r o m 2 2 3 3 $ 3 2 $ $ $ $ 2 2 3 3 3 2 3 3 2 3 2 0 6 5 2 3 7 4 m * / * / m 7 4 3 2 " 2 # description the PA97DR is a high voltage mosfet operational amplifer designed as a low cost solution for driving continuous output currents up to 10 ma and pulse cur - rents to 15 ma into capacitive loads. the safe operat - ing area (soa) has no second breakdown limitations. the mosfet output stage is biased class c for low quiescent current operation. external compensation provides fexibility in choosing bandwidth and slew rate for the application. apexs sip05 package uses a minimum of board space allowing for high density circuit boards. equivalent schematic copyright ? cirrus logic, inc. 2009 (all rights reserved) http://www.cirrus.com jan 2009 apex ? PA97DRurevg
p r o d u c t i n n o v a t i o n f r o m PA97DR 2 PA97DRu parameter symbol min max units supply voltage, +v s to -v s 900 v output current, source, sink, within soa 15 ma power dissipation,continuous @ tc = 25oc 5 w input voltage, differential (note 3) -20 20 v input voltage, common mode (see text) -v s v s v temperature, pin solder, 10s max. 220 c temperature, junction (note 2) 150 c temperature range, storage ?65 150 c operating temperature, case ?55 125 c c haracteristics and s pecifications absolute maximum ra tings parameter test conditions min typ max units input offset voltage, initial 0.5 5 mv offset voltage vs. temperature full temperature range 10 50 v/c offset voltage vs. supply 10 25 v/v offset voltage vs. time 75 v/khz bias current, initial 200 2000 pa bias current vs. supply 4 pa/v offset current, initial 50 500 pa input impedance, dc 10 11 ? input capacitance 4 pf common mode voltage range (note 3) v s =250v v s ? 30 v common mode rejection, dc v cm = 90v 80 98 db noise 10khz bw, r s = 1k, c c = 10pf 2 vrms gain open loop @ 15hz r l = 5k, c c = 10pf 94 111 db gain bandwidth product @ 1mhz r l = 5k, c c = 10pf 1 mhz power bandwidth r l = 5k, c c = 10pf 2 khz phase margin, a v = 100 full temperature range 60 output voltage swing (note 3) i o = 10ma v s ? 24 v s ? 20 v current, continuous 10 ma slew rate, a v = 100 c c = 10pf 8 v/s settling time, to 0.1% c c = 10pf, 2v step 2 s resistance 10ma load 100 s pecifications
p r o d u c t i n n o v a t i o n f r o m PA97DR PA97DRu notes: 1. unless otherwise noted: t c = 25c, dc input specifcations are value given. power supply voltage is typical rating. c c = 10pf. 2. long term operation at the maximum junction temperature will result in reduced product life. derate internal power dissipation to achieve high mttf. 3. although supply voltages can range up to 450v the input pins cannot swing over this range. the input pins must be at least 30v from either supply rail but not more than 500v from either supply rail. see text for a more complete description of the common mode voltage range. 4. rating applies if the output current alternates between both output transistors at a rate faster than 60hz. 5. derate max supply rating .625 v/c below 25c case. no derating needed above 25c case. caution the PA97DR is constructed from mosfet transistors. esd handling procedures must be ob - served. parameter test conditions min typ max units power supply voltage (note 5) 50 300 450 v current, quiescent, amplifer only 0.6 1 ma thermal resistance, ac, junction to case (note 4) full temp range, f > 60hz 20 oc/w resistance, dc, junction to case full temp range, f < 60hz 25 oc/w resistance, junction to air full temp range 40 oc/w temperature range, case C25 +85 oc 5 & |