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| savantic semiconductor product specification silicon npn power transistors bu326 BU326A description with to-3 package high voltage;high speed low collector saturation voltage. applications intended for operating in ctv receiver?s chopper supplies. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (tc=25 ) symbol parameter conditions value unit bu326 800 v cbo collector-base voltage BU326A open emitter 900 v bu326 375 v ceo collector-emitter voltage BU326A open base 400 v v ebo emitter-base voltage open collector 10 v i c collector current 6 a i cm collector current-peak 8 a i b base current 3 a p t total power dissipation t c =25 75 w t j junction temperature -65~200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 2.33 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors bu326 BU326A c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit bu326 375 v ceo(sus) collector-emitter sustaining voltage BU326A i c =0.1a; i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =2.5 a;i b =0.5a 1.5 v v cesat-2 collector-emitter saturation voltage i c =4a;i b =1.25 a 3.0 v v besat-1 base-emitter saturation voltage i c =2.5 a;i b =0.5a 1.4 v v besat-2 base-emitter saturation voltage i c =4a;i b =1.25 a 1.6 v bu326 v ce =800v;v be =0 i ces collector cut-off current BU326A v ce =900v;v be =0 1 ma i ebo emitter cut-off current v eb =10v; i c =0 10 ma h fe dc current gain i c =1a ; v ce =5v 25 f t transition frequency i c =0.2a ; v ce =10v; f=1mhz 4.0 mhz switching times t on turn-on time 0.5 s t s storage time 3.5 s t f fall time i c =2.5a ; i b1 =0.5a;i b2 =-1a v cc =250v ; 0.5 s savantic semiconductor product specification 3 silicon npn power transistors bu326 BU326A package outline fig.2 outline dimensions |
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