fdc6327c fdc6327c, rev. e fdc6327c dual n & p-channel 2.5v specified powertrench tm mosfet general description these n & p-channel 2.5v specified mosfets are produced using fairchild semiconductor's advanced powertrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. these devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive so-8 and tssop-8 packages are impractical. applications ? dc/dc converter ? load switch ? motor driving july 2000 features ? n-channel 2.7a, 20v. r ds(on) = 0.08 ? @ v gs = 4.5v r ds(on) = 0.12 ? @ v gs = 2.5v ? p-channel -1.6a, -20v.r ds(on) = 0.17 ? @ v gs = -4.5v r ds(on) = 0.25 ? @ v gs = -2.5v ? fast switching speed. ? low gate charge. ? high performance trench technology for extremely low r ds(on) . ? supersot tm -6 package: small footprint (72% smaller than so-8); low profile (1mm thick). ? 1999 fairchild semiconductor corporation absolute maximum ratings t a = 25c unless otherwise noted symbol parameter n-channel p-channel units v dss drain-source voltage 20 -20 v v gss gate-source voltage 8 8v i d drain current - continuous (note 1a) 2.7 -1.9 a - pulsed 8 -8 p d power dissipation (note 1a) 0.96 w (note 1b) 0.9 (note 1c) 0.7 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 130 c/w r jc thermal resistance, junction-to-case (note 1) 60 c/w package marking and ordering information device marking device reel size tape width quantity .327 fdc6327c 7? 8mm 3000 d1 s2 g1 d2 s1 g2 supersot -6 tm 1 5 6 3 2 4
fdc6327c fdc6327c, rev. e electrical characteristics t a = 25c unless otherwise noted s y mbol parameter test conditions t yp emin t yp max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a v gs = 0 v, i d = - 250 a n-ch p-ch 20 -20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c i d = - 250 a, referenced to 25 c n-ch p-ch 12 -19 mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v v ds = -16 v, v gs = 0 v n-ch p-ch 1 -1 a i gssf gate-body leakage, forward v gs = 8 v, v ds = 0 v all 100 na i gssr gate-body leakage, reverse v gs = -8 v, v ds = 0 v all -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a v ds = v gs , i d = -250 a n-ch p-ch 0.4 -0.4 0.9 -0.9 1.5 -1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c i d = - 250 a, referenced to 25 c n-ch p-ch -2.1 2.3 mv/ c r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 2.7 a v gs = 4.5 v, i d = 2.7 a, t j = 125 c v gs = 2.5 v, i d = 2.2 a v gs = -4.5 v, i d = -1.6 a v gs = -4.5 v, i d = -1.6 a, t j = 125 c v gs = -2.5 v, i d = -1.3 a n-ch n-ch n-ch p-ch p-ch p-ch 0.069 0.094 0.093 0.141 0.203 0.205 0.08 0.13 0.12 0.17 0.27 0.25 ? i d(on) on-state drain current v gs = 4.5 v, v ds = 5 v v gs = -4.5 v, v ds = -5 v n-ch p-ch 8 -8 a g fs forward transconductance v ds = 5 v, i d = 2.7 a v ds = -5 v, i d = -1.9 a n-ch p-ch 7.7 4.5 s dynamic characteristics c iss input capacitance n-ch p-ch 325 315 pf c oss output capacitance n-ch p-ch 75 65 pf c rss reverse transfer ca p acitance n-channel v ds = 10 v, v gs = 0 v, f = 1.0 mhz p-channel v ds = 10 v, v gs = 0 v, f = 1.0 mhz n-ch p-ch 35 24 pf
fdc6327c fdc6327c, rev. e electrical characteristics (continued) t a = 25c unless otherwise noted s y mbol parameter test conditions type min t yp max units switching characteristics (note 2) t d(on) turn-on delay time n-ch p-ch 5 7 15 14 ns t r turn-on rise time n-ch p-ch 9 14 18 25 ns t d(off) turn-off delay time n-ch p-ch 12 14 22 25 ns t f turn-off fall time n-channel v dd = 10 v, i d = 1 a, v gs = 4.5v, r gen = 6 ? p-channel v dd = -10 v, i d = -1 a, v gs = -4.5 v, r gen = 6 ? n-ch p-ch 3 3 9 9 ns q g total gate charge n-ch p-ch 3.25 2.85 4.5 4.0 nc q gs gate-source charge n-ch p-ch 0.65 0.68 nc q gd gate-drain charge n-channel v ds = 10 v, i d = 2.7 a, v gs = 4.5v p-channel v ds = -10 v , i d = -1.9 a , v gs = -4.5v n-ch p-ch 0.90 0.65 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current n-ch p-ch 0.8 -0.8 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.8 a (note 2) v gs = 0 v, i s = - 0.8 a (note 2) n-ch p-ch 0.76 -0.79 1.2 -1.2 v notes: 1: r ja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mou nting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. both devices are assumed to be operating and sharing the dissipated heat energy equally. scale 1 : 1 on letter size paper 2: pulse test: pulse width 300 s, duty cycle 2.0% a) 130 c/w when mounted on a 0.125 in 2 pad of 2 oz. copper. b) 140 c/w when mounted on a 0.005 in 2 pad of 2 oz. copper. c) 180 c/w when mounted on a 0.0015 in 2 pad of 2 oz. copper.
fdc6327c fdc6327c, rev. e typical characteristics: n-channel figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. 0 2 4 6 8 10 01234 v ds , drain-source voltage (v) v gs = 4.5v 3.0v 2.5v 2.0v 1.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0246810 i d , drain current (a) v gs = 2.0v 2.5v 3.0v 3.5v 4.5v 0 2 4 6 8 10 01234 v gs , gate to source voltage (v) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 00.40.81.21.6 v sd , body diode forward voltage (v) t a = 125 o c 25 o c -55 o c v gs = 0v figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 0.05 0.1 0.15 0.2 0.25 12345 v gs , gate to source voltage (v) i d = 1.3a t a = 125 o c t a = 25 o c 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 -50-25 0 255075100125150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 2.7a v gs = 4.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage.
fdc6327c fdc6327c, rev. e typical characteristics: n-channel (continued) 0 100 200 300 400 500 0 4 8 121620 v ds , drain to source voltage (v) c iss c rss c oss f = 1mhz v gs = 0 v 0.01 0.1 1 10 0.1 1 10 100 v ds , drain-source voltage (v) dc 1s 100ms 10ms 1ms 100 ja = 180 o c/w t a = 25 o c 0 1 2 3 4 5 0.01 0.1 1 10 100 1000 single pulse time (sec) single pulse r ja = 180 o c/w t a = 25 o c figure 7. gate-charge characteristics. figure 8. capacitance characteristics. 0 1 2 3 4 5 00.511.522.533.54 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 2.7a v ds = 5v 10v 15v figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation.
fdc6327c fdc6327c, rev. e typical characteristics: p-channel figure 15. transfer characteristics. figure 16. body diode forward voltage variation with source current and temperature. 0 2 4 6 8 10 012345 -v ds , drain-source voltage (v) -1.5v -2.0v -2.5v -3.0v -3.5v v gs = -4.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0246810 -i d , dirain current (a) v gs = -2.0v -2.5v -3.0v -3.5v -4.0v -4.5v 0 2 4 6 8 10 01234 -v gs , gate to source voltage (v) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 0 0.4 0.8 1.2 1.6 -v sd , body diode forward voltage (v) v gs = 0v t a = 125 o c 25 o c -55 o c 0 0.1 0.2 0.3 0.4 0.5 12345 -v gs , gate to source voltage (v) i d = -1a t a = 125 o c t a = 25 o c 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) i d = -1.9a v gs = -4.5v figure 11. on-region characteristics. figure 12. on-resistance variation with drain current and gate voltage. figure 13. on-resistance variation with temperature. figure 14. on-resistance variation with gate-to-source voltage.
fdc6327c fdc6327c, rev. e typical characteristics: p-channel (continued) figure 19. maximum safe operating area. figure 20. single pulse maximum power dissipation. 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 q g , gate charge (nc) v ds = -5.0v -10v -15v i d = -1.9a 0 50 100 150 200 250 300 350 400 450 0 4 8 121620 -v ds , drain to source voltage (v) c iss c oss c rss f = 1 mhz v gs = 0 v 0.01 0.1 1 10 0.1 1 10 100 -v ds , drain-source voltage (v) dc 1s 100ms 10ms 1ms 100 ja = 180 o c/w t a = 25 o c 0 1 2 3 4 5 0.01 0.1 1 10 100 1000 single pulse time (sec) single pulse r ja = 180 o c/w t a = 25 o c figure 17. gate-charge characteristics. figure 18. capacitance characteristics.
fdc6327c fdc6327c, rev. e typical characteristics: n & p-channel (continued) figure 21. transient thermal response curve. 0.0001 0.001 0.01 0.1 1 10 100 300 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 r(t), normalized effective duty cycle, d = t / t 1 2 r (t) = r(t) * r r = 180c/w ja ja ja t - t = p * r (t) ja a j p(pk) t 1 t 2
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