symbol v ds v gs i dm i ar e ar t j , t stg symbol ty p max r ja 51 60 r jc 1.4 2.5 20 pulsed drain current gate-source voltage drain-source voltage i d 38 27 continuous drain current b t c =25c g t c =100c b absolute maximum ratings t a =25c unless otherwise noted v v a 30 140 60 60 parameter maximum units 60 a repetitive avalanche energy l=0.1mh c mj power dissipation b t c =25c p d w t c =100c 30 avalanche current c junction and storage temperature range -55 to 175 thermal characteristics parameter units c maximum junction-to-case b steady-state c/w maximum junction-to-ambient a steady-state c/w aou400 n-channel enhancement mode field effect transistor features v ds (v) = 60v i d = 38a (v gs = 10v) r ds(on) < 20m ? (v gs = 10v) r ds(on) < 25m ? (v gs = 4.5v) general description the aou400 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. standard product aou400 is pb-free (meets rohs & sony 259 specifications). AOU400L is a green product ordering option. aou400 and a ou400l are electrically identical. g d s g d s to-251 top view drain connected to tab alpha & omega semiconductor, ltd.
aou400 symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.1 3 v i d(on) 60 a 16 20 t j =125c 31 20 25 m ? g fs 5.6 s v sd 0.74 1 v i s 4a c iss 1920 2300 pf c oss 155 pf c rss 116 pf r g 0.65 0.8 ? q g (10v) 47.6 68 nc q g (4.5v) 24.2 30 nc q gs 6nc q gd 14.4 nc t d(on) 7.4 ns t r 5.1 ns t d(off) 28.2 ns t f 5.5 ns t rr 34 41 ns q rr 46 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =48v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =30v, r l =1.5 ? , r gen =3 ? turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =30v, i d =20a total gate charge gate drain charge v gs =0v, v ds =30v, f=1mhz switching parameters a: the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires. rev2: august 2005 alpha & omega semiconductor, ltd.
aou400 typical electrical and thermal characteristics 0 10 20 30 40 50 60 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 10 20 30 40 50 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 14 16 18 20 22 24 0 10203040 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v i d =20a i d =20a 10 20 30 40 50 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c alpha & omega semiconductor, ltd.
aou400 typical electrical and thermal characteristic s 0 2 4 6 8 10 0 1020304050 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 200 400 600 800 1e-05 1e-04 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rs s 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 1ms dc t j(max) =175c t a =25c r ds(on) limited v ds =30v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =2.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 10 s alpha & omega semiconductor, ltd.
aou400 typical electrical and thermal characteristic s 0 10 20 30 40 50 60 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 20 40 60 80 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t ? ? = t a =25c alpha & omega semiconductor, ltd.
|
