Part Number Hot Search : 
75237 ATA01501 ATS04 B1212 HD74HC75 TC5540 M57745B MS42PM58
Product Description
Full Text Search
 

To Download TJ15P04M3 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  TJ15P04M3 1. 1. 1. 1. applications applications applications applications ? dc-dc converters ? desktop computers 2. 2. 2. 2. features features features features (1) low drain-source on-resistance: r ds(on) = 28 m ? (typ.) (v gs = -10 v) (2) low leakage current: i dss = -10 a (max) (v ds = -40 v) (3) enhancement mode: v th = -0.8 to -2.0 v (v ds = -10 v, i d = -0.1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1: gate 2: drain (heatsink) 3: source dpak 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics drain-source voltage gate-source voltage drain current (dc) drain current (pulsed) power dissipation single-pulse avalanche energy avalanche current channel temperature storage temperature (t c = 25 ) (note 1) (note 1) (note 2) symbol v dss v gss i d i dp p d e as i ar t ch t stg rating -40 20 -15 -45 29 29 -15 150 -55 to 150 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook ("handling precautions"/"derating concept and methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). www.freescale.net.cn mosfets silicon p-channel mos (u-mos -h) www.freescale.net.cn 1/8 7-30  026)(7v 6lolfrq3&kdqqho026 8026 3 7-30 7-30 7-30 7-30     $ssolfdwlrqv $ssolfdwlrqv $ssolfdwlrqv $ssolfdwlrqv ? '&'&&rqyhuwhuv ? 'hvnwrs&rpsxwhuv     )hdwxuhv )hdwxuhv )hdwxuhv )hdwxuhv  /rzgudlqvrxufhrquhvlvwdqfh5 '6 21  p ? ? ? ? ? ? ? ? ??? '3$.
5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal characteristics characteristics channel-to-case thermal resistance channel-to-ambient thermal resistance symbol r th(ch-c) r th(ch-a) max 4.3 125 unit /w note 1: ensure that the channel temperature does not exceed 150 . note 2: v dd = -32 v, t ch = 25 (initial), l = 100 h, r g = 25 ? , i ar = -15 a note: this transistor is sensitive to electrostatic discharge and should be handled with care. www.freescale.net.cn 2/8 7-30      7khupdo&kdudfwhulvwlfv 7khupdo&kdudfwhulvwlfv 7khupdo&kdudfwhulvwlfv 7khupdo&kdudfwhulvwlfv &kdudfwhulvwlfv &kdqqhowrfdvhwkhupdouhvlvwdqfh &kdqqhowrdpelhqwwkhupdouhvlvwdqfh 6\pero 5 wk fkf 5 wk fkd 0d[   8qlw  : 1rwh (qvxuhwkdwwkhfkdqqhowhpshudwxuhgrhvqrwh[fhhg   1rwh 9 ''  97 fk     lqlwldo /  ?
6. 6. 6. 6. electrical characteristics electrical characteristics electrical characteristics electrical characteristics 6.1. 6.1. 6.1. 6.1. static characteristics (t static characteristics (t static characteristics (t static characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics gate leakage current drain cut-off current drain-source breakdown voltage drain-source breakdown voltage gate threshold voltage drain-source on-resistance (note 3) symbol i gss i dss v (br)dss v (br)dsx v th r ds(on) test condition v gs = 20 v, v ds = 0 v v ds = -40 v, v gs = 0 v i d = -10 ma, v gs = 0 v i d = -10 ma, v gs = 10 v v ds = -10 v, i d = -0.1 ma v gs = -4.5 v, i d = -7.5 a v gs = -10 v, i d = -7.5 a min -40 -30 -0.8 typ. 37 28 max 0.1 -10 -2.0 48 36 unit a v m ? note 3: if a reverse bias is applied between gate and source, this device enters v (br)dsx mode. note that the drain- source breakdown voltage is lowered in this mode. 6.2. 6.2. 6.2. 6.2. dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics input capacitance reverse transfer capacitance output capacitance switching time (rise time) switching time (turn-on time) switching time (fall time) switching time (turn-off time) symbol c iss c rss c oss t r t on t f t off test condition v ds = -10 v, v gs = 0 v, f = 1 mhz see figure 6.2.1. min typ. 1100 130 170 11 19 42 170 max unit pf ns fig. fig. fig. fig. 6.2.1 6.2.1 6.2.1 6.2.1 switching time test circuit switching time test circuit switching time test circuit switching time test circuit 6.3. 6.3. 6.3. 6.3. gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics total gate charge (gate-source plus gate-drain) gate-source charge 1 gate-drain charge symbol q g q gs1 q gd test condition v dd -32 v, v gs = -10 v, i d = -15 a min typ. 26 6.7 2.5 max unit nc 6.4. 6.4. 6.4. 6.4. source-drain characteristics (t source-drain characteristics (t source-drain characteristics (t source-drain characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics reverse drain current (pulsed) diode forward voltage (note 4) symbol i drp v dsf test condition i dr = -15 a, v gs = 0 v min typ. max -45 1.2 unit a v note 4: ensure that the channel temperature does not exceed 150 . www.freescale.net.cn 3/8 7-30      (ohfwulfdo&kdudfwhulvwlfv (ohfwulfdo&kdudfwhulvwlfv (ohfwulfdo&kdudfwhulvwlfv (ohfwulfdo&kdudfwhulvwlfv     6wdwlf&kdudfwhulvwlfv 7 6wdwlf&kdudfwhulvwlfv 7 6wdwlf&kdudfwhulvwlfv 7 6wdwlf&kdudfwhulvwlfv 7 d d d d             xqohvvrwkhuzlvhvshflilhg xqohvvrwkhuzlvhvshflilhg xqohvvrwkhuzlvhvshflilhg xqohvvrwkhuzlvhvshflilhg &kdudfwhulvwlfv *dwhohdndjhfxuuhqw 'udlqfxwriifxuuhqw 'udlqvrxufheuhdngrzqyrowdjh 'udlqvrxufheuhdngrzqyrowdjh *dwhwkuhvkrogyrowdjh 'udlqvrxufhrquhvlvwdqfh 1rwh 6\pero , *66 , '66 9 %5 '66 9 %5 '6; 9 wk 5 '6 21 7hvw&rqglwlrq 9 *6   ? ? ? ? ?
7. 7. 7. 7. marking marking marking marking fig. fig. fig. fig. 7.1 7.1 7.1 7.1 marking marking marking marking www.freescale.net.cn 4/8 7-30      0dunlqj 0dunlqj 0dunlqj 0dunlqj )lj )lj )lj )lj     0dunlqj 0dunlqj 0dunlqj 0dunlqj
8. 8. 8. 8. characteristics curves (note) characteristics curves (note) characteristics curves (note) characteristics curves (note) fig. fig. fig. fig. 8.1 8.1 8.1 8.1 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.2 8.2 8.2 8.2 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.3 8.3 8.3 8.3 i i i i d d d d - v - v - v - v gs gs gs gs fig. fig. fig. fig. 8.4 8.4 8.4 8.4 v v v v ds ds ds ds - v - v - v - v gs gs gs gs fig. fig. fig. fig. 8.5 8.5 8.5 8.5 r r r r ds(on) ds(on) ds(on) ds(on) - i - i - i - i d d d d fig. fig. fig. fig. 8.6 8.6 8.6 8.6 r r r r ds(on) ds(on) ds(on) ds(on) - t - t - t - t a a a a www.freescale.net.cn 5/8 7-30      &kdudfwhulvwlfv&xuyhv 1rwh &kdudfwhulvwlfv&xuyhv 1rwh &kdudfwhulvwlfv&xuyhv 1rwh &kdudfwhulvwlfv&xuyhv 1rwh )lj )lj )lj )lj     , , , , ' ' ' ' 9 9 9 9 '6 '6 '6 '6 )lj )lj )lj )lj     , , , , ' ' ' ' 9 9 9 9 '6 '6 '6 '6 )lj )lj )lj )lj     , , , , ' ' ' ' 9 9 9 9 *6 *6 *6 *6 )lj )lj )lj )lj     9 9 9 9 '6 '6 '6 '6 9 9 9 9 *6 *6 *6 *6 )lj )lj )lj )lj     5 5 5 5 '6 21 '6 21 '6 21 '6 21 , , , , ' ' ' ' )lj )lj )lj )lj     5 5 5 5 '6 21 '6 21 '6 21 '6 21 7 7 7 7 d d d d
fig. fig. fig. fig. 8.7 8.7 8.7 8.7 i i i i dr dr dr dr - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.8 8.8 8.8 8.8 capacitance - v capacitance - v capacitance - v capacitance - v ds ds ds ds fig. fig. fig. fig. 8.9 8.9 8.9 8.9 v v v v th th th th - t - t - t - t a a a a fig. fig. fig. fig. 8.10 8.10 8.10 8.10 dynamic input/output characteristics dynamic input/output characteristics dynamic input/output characteristics dynamic input/output characteristics fig. fig. fig. fig. 8.11 8.11 8.11 8.11 p p p p d d d d - t - t - t - t c c c c (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) www.freescale.net.cn 6/8 7-30  )lj )lj )lj )lj     , , , , '5 '5 '5 '5 9 9 9 9 '6 '6 '6 '6 )lj )lj )lj )lj     &dsdflwdqfh9 &dsdflwdqfh9 &dsdflwdqfh9 &dsdflwdqfh9 '6 '6 '6 '6 )lj )lj )lj )lj     9 9 9 9 wk wk wk wk 7 7 7 7 d d d d )lj )lj )lj )lj     '\qdplf,qsxw2xwsxw&kdudfwhulvwlfv '\qdplf,qsxw2xwsxw&kdudfwhulvwlfv '\qdplf,qsxw2xwsxw&kdudfwhulvwlfv '\qdplf,qsxw2xwsxw&kdudfwhulvwlfv )lj )lj )lj )lj     3 3 3 3 ' ' ' ' 7 7 7 7 f f f f *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp
fig. fig. fig. fig. 8.12 8.12 8.12 8.12 r r r r th th th th /r /r /r /r th(ch-c) th(ch-c) th(ch-c) th(ch-c) - t - t - t - t w w w w (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.13 8.13 8.13 8.13 safe operating area safe operating area safe operating area safe operating area (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.14 8.14 8.14 8.14 e e e e as as as as - t - t - t - t ch ch ch ch (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.15 8.15 8.15 8.15 test circuit/waveform test circuit/waveform test circuit/waveform test circuit/waveform note: the above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. www.freescale.net.cn 7/8 7-30  )lj )lj )lj )lj     u u u u wk wk wk wk 5 5 5 5 wk fkf wk fkf wk fkf wk fkf w w w w z z z z *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp )lj )lj )lj )lj     6dih2shudwlqj$uhd 6dih2shudwlqj$uhd 6dih2shudwlqj$uhd 6dih2shudwlqj$uhd *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp )lj )lj )lj )lj     ( ( ( ( $6 $6 $6 $6 7 7 7 7 fk fk fk fk *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp *xdudqwhhg0d[lpxp )lj )lj )lj )lj     7hvw&lufxlw:dyhirup 7hvw&lufxlw:dyhirup 7hvw&lufxlw:dyhirup 7hvw&lufxlw:dyhirup 1rwh 7khderyhfkdudfwhulvwlfvfxuyhvduhsuhvhqwhgiruuhihuhqfhrqo\dqgqrwjxdudqwhhge\surgxfwlrqwhvw xqohvvrwkhuzlvhqrwhg
package dimensions package dimensions package dimensions package dimensions unit: mm www.freescale.net.cn 8/8 7-30      3dfndjh'lphqvlrqv 3dfndjh'lphqvlrqv 3dfndjh'lphqvlrqv 3dfndjh'lphqvlrqv 8qlwpp :hljkwj w\s 3dfndjh1dph v  726+,%$.6 1lfnqdph'3$.


▲Up To Search▲   

 
Price & Availability of TJ15P04M3
DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
TJ15P04M3,RQ(S
264-TJ15P04M3RQ(SCT-ND
Toshiba America Electronic Components MOSFET P-CH 40V 15A DPAK 10000: USD0.315
6000: USD0.32105
2000: USD0.3371
1000: USD0.35809
500: USD0.43958
100: USD0.5186
10: USD0.667
1: USD0.81
BuyNow
2767

Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
TJ15P04M3RQ(S
TJ15P04M3,RQ(S
Toshiba America Electronic Components Trans MOSFET P-CH 40V 15A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: TJ15P04M3,RQ(S) 200000: USD0.32256
20000: USD0.33012
16000: USD0.3402
12000: USD0.34776
8000: USD0.35784
4000: USD0.37548
2000: USD0.38556
BuyNow
0

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
TJ15P04M3,RQ(S
757-TJ15P04M3RQS
Toshiba America Electronic Components MOSFET P-Ch MOS 1100 pF 29W PD -15A -40V 1: USD0.81
10: USD0.667
100: USD0.519
500: USD0.44
1000: USD0.359
2000: USD0.337
4000: USD0.321
10000: USD0.315
BuyNow
1816

Verical

Part # Manufacturer Description Price BuyNow  Qty.
TJ15P04M3,RQ(S
60700498
Toshiba America Electronic Components Trans MOSFET P-CH Si 40V 15A 3-Pin(2+Tab) DPAK T/R 4000: USD0.2325
2000: USD0.2463
1000: USD0.2475
500: USD0.265
200: USD0.3263
100: USD0.3275
88: USD0.3575
38: USD0.7288
BuyNow
5173

Chip1Stop

Part # Manufacturer Description Price BuyNow  Qty.
TJ15P04M3,RQ(S
C1S751200839306
Toshiba America Electronic Components MOSFET 4000: USD0.21
2000: USD0.223
1000: USD0.225
500: USD0.24
200: USD0.295
100: USD0.296
50: USD0.324
5: USD0.664
BuyNow
5173

CHIPMALL.COM LIMITED

Part # Manufacturer Description Price BuyNow  Qty.
TJ15P04M3,RQ(S
Toshiba America Electronic Components 1: USD0.33782
BuyNow
475

EBV Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
TJ15P04M3,RQ(S
TJ15P04M3,RQ(S
Toshiba America Electronic Components Trans MOSFET P-CH 40V 15A 3-Pin(2+Tab) DPAK (Alt: TJ15P04M3,RQ(S) BuyNow
0

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X