symbol v ds v gs i dm t j , t stg symbol ty p max 300 360 340 425 r jl 280 320 junction and storage temperature range a p d c 0.35 0.22 -55 to 150 t a =70c i d 1.6 1.3 10 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 12 gate-source voltage drain-source voltage 30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AO7410 features v ds (v) = 30v i d = 1.6 a (v gs = 10v) r ds(on) < 90m ? (v gs = 10v) r ds(on) < 100m ? (v gs = 4.5v) r ds(on) < 175m ? (v gs = 2.5v) the AO7410 uses advanced trench technology to provide excellent r ds(on) , very low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. standard product AO7410 is pb-free (meets rohs & sony 259 specifications). AO7410l is a green product ordering option. AO7410 and a o7410l are electrically identical. g d s s g d sc-70 (sot-323) top view n-channel enhancement mode field effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 30 v 0.001 1 t j =55c 5 i gss 100 na v gs(th) 1 1.4 1.8 v i d(on) 10 a 75 90 t j =125c 105 130 82 100 m ? 120 175 m ? g fs 4.5 s v sd 0.84 1 v i s 2.5 a c iss 226 270 pf c oss 39 pf c rss 29 pf r g 1.4 1.7 ? q g 3 3.6 nc q gs 0.4 nc q gd 1.2 nc t d(on) 2.8 4 ns t r 2.1 3 ns t d(off) 17.4 21 ns t f 2.1 3 ns t rr 9.1 11 ns q rr 3.4 4 nc gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters i f =1.6a, di/dt=100a/ s v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =15v, i d =1.6a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =9.4 ? , r gen =6 ? m ? v gs =4.5v, i d =1.5a i s =1a,v gs =0v v ds =5v, i d =3.8a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =1.6a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =2.5v, i d =1a v gs =4.5v, v ds =5v v gs =10v, i d =1.6a reverse transfer capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev1: august 2005 AO7410 n-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 270 1.7 3 3.6 0.4 1.2 2.8 2.1 3 17.4 21 2.1 9.1 11 3.4 4 0 3 6 9 12 15 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2.5v 3v 3.5v 4v 10v 6v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) 50 100 150 200 250 0246810 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v i d =1a v gs =10v i d =1.6a v gs =4.5v i d =1.5a 60 80 100 120 140 160 180 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =1.6a 25c 125c AO7410 n-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristics 270 1.7 3.6 13 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 50 100 150 200 250 300 350 400 0 5 10 15 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =1.6a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =360c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s AO7410 n-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 4
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