df m 100pxm33 - a000 fast recovery diode module replaces ds5564 - 1.2 ds5564 - 2 november 2010 (ln 27719 ) 1 / 6 www.dynexsemi.com features ? low reverse recovery charge ? high switching speed ? low forward volt drop ? isolated alsic base with aln substrates ? lead free c onstruction applications ? chopper diodes ? boost and buck converters ? free - wheel circuits ? snubber circuits ? resonant converters ? induction heating ? multi - level switch inverters the df m 1 00pxm33 - a 000 module houses a series connected pair of 33 00v, fast recovery diode s (frd s ) . designed for low power loss, the module is suitable for a variety of high voltage applications in motor driv es and power conversion. configurations with common cathode and common anode are available on request. fast switching times and low reverse recovery losses allow high frequency operation, making the device suitable for the latest drive designs employing pwm and high frequency switching. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order a s: df m 1 00pxm33 - a 000 C series connection df m 100pxm33 - a005 C common cathode df m 100pxm33 - a006 C common anode note: when ordering, please use the complete part number key parameters v rrm 33 00 v v f (typ) 2.5 v i f (max) 1 00 a i fm (max) 2 00 a ser ies connection, part no: dfm100pxm33 - a000 common cathode , part no: dfm100pxm33 - a005 common anode, part no: dfm100pxm33 - a006 fig. 1 circuit configuration outline type code: p (see fig. 7 for further information) fig. 2 package 3(a1) 1(a2/k1) 2(k2) 3(a1) 1(k2/k1) 2(a2) 3(k1) 1(a2/a1) 2(k2)
df m 100pxm33 - a000 2 /6 www.dynexsemi.com absol ute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safet y precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v rrm repeti tive peak reverse voltage t j = 125c 3300 v i f fo rward current (per arm) dc, t case = 70 c 1 00 a i fm max. forward current (per arm) t case = 10 5 c , t p = 1ms 2 00 a i 2 t i 2 t value fuse current rating v r = 0, t p = 10ms, t j = 125c 5 ka 2 s p max max. power dissipation t case = 25c, t j = 125 c 463 w v isol isol ation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 60 0 0 v q pd partial discharge C per module iec1287, v 1 = 35 00v, v 2 = 26 00v, 50hz rms 10 pc thermal and mechanical ratings internal insulation material: aln baseplate mat erial: alsic creepage distance: 33mm clearance: 20mm cti (comparative tracking index): 350 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance (per arm ) continuous dissipation C th(c - h ) thermal resistance C j junction temperature - 40 - 125 c t stg storage temperature range - 40 - 125 c screw torque mounting C C
df m 100pxm33 - a000 3 / 6 www.dynexsemi.com static electrical characteristics C per arm t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i rm peak reverse current v r = 33 00v, t j = 125c 10 ma v f forward voltage i f = 1 00a 2.5 v i f = 1 00a, t j = 125c 2.5 v l m i nductance - 30 nh dynamic electrical characteristics C per arm t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units q rr reverse recovery charge i f = 1 00a v r = 18 00v di f /dt = 6 00a/ s 60 c i rr peak reverse recovery current 85 a e rec reverse recovery energy 65 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units q rr reverse recovery charge i f = 1 00a v r = 18 00v di f /dt = 5 00a/s 9 5 c i rr peak r everse recovery current 95 a e rec reverse recovery energy 110 mj
df m 100pxm33 - a000 4 /6 www.dynexsemi.com fig. 3 diode typical forward characteristics fig. 4 transient thermal impedance fig. 5 dc current rating vs case temperature fig. 6 re verse bias safe operating area (rbsoa)
df m 100pxm33 - a000 5 / 6 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 50 0g m odule outline type code: p fig. 7 module outline drawing
df m 100pxm33 - a000 6 /6 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately traine d technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the s uitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please con tact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunct ion may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating beca use there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged an d allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage t o the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. t he annotations are a s follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for vo lume production is in progress. the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_soluti ons@dynexsemi.com ? dynex semiconductor ltd. 2002 . technical documentation C not for resale.
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