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| transisor (npn) features ? darlington connection f or a high h fe ? high input impedance marking: r1m m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 40 v v ceo collector - emitter voltage 32 v v ebo emitter - base voltage 12 v i c collector current 300 m a p c collector power dissipation 200 m w r ja thermal resistance from j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 10 0 a , i e =0 40 v collector - emitter breakdown voltage v (br) c e o i c = 10 ma, i b =0 32 v emitter - base breakdown voltage v (br)eb o i e = 10 0 a , i c =0 12 v collector cut - off current i cbo v cb = 30 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 12 v, i c =0 0.1 a dc current gain h fe v ce = 3 v, i c = 100m a 5000 collector - emitter saturation voltage v ce(sat) i c = 200m a, i b = 0. 2m a 1.4 v transition frequency f t v ce = 5 v,i c = 10m a, f= 1 00 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 2.5 pf so t C 23 1. base 2. emitter 3. collector 1 www.htsemi.com semiconductor jinyu 2s d 2142
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