november 2006 FDD4243 40v p-channel powertrench ? mosfet ?2006 fairchild semiconductor corporation FDD4243 rev.c www.fairchildsemi.com 1 FDD4243 40v p-channel powertrench ? mosfet - 40v, - 14a, 44m ? features ? max r ds(on) = 44m ? at v gs = -10v, i d = -6.7a ? max r ds(on) = 64m ? at v gs = -4.5v, i d = -5.5a ? high performance trench tech nology for extremely low r ds(on) ? rohs compliant general description this p-channel mosfet has been produced using fairchild semiconductor?s proprietary powertrench ? technology to deliver low r ds(on) and optimized bvdss c apability to offer superior performance benefit in the applications. application ? inverter ? power supplies mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage - 40 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25c - 14 a -continuous (silicon limited) t c = 25c (note 1) - 24 -continuous t a = 25c (note 1a) - 6.7 -pulsed -60 e as single pulse avalanche energy (note 3) 84 mj p d power dissipation t c = 25c 42 w power dissipation (note 1a) 3 t j , t stg operating and storage junction temperature range - 55 to +150 c r jc thermal resistance, junction to case 3.0 c/w r ja thermal resistance, junction to ambient (note 1a) 40 device marking device package reel size tape width quantity FDD4243 FDD4243 d-pak(to-252) 13?? 12mm 2500 units g s d to-252 d-pak ( to-252 ) s g d
FDD4243 40v p-channel powertrench ? mosfet FDD4243 rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = - 250 p a, v gs = 0v - 40 v ' bv dss ' t j breakdown voltage temperature coefficient i d = -250 p a, referenced to 25 c -32 mv/ c i dss zero gate voltage drain current v ds = - 32v, - 1 p a v gs = 0v t j = 125 c -100 i gss gate to source leakage current v gs = 20v, v gs = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = - 250 p a - 1 - 1.6 - 3 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = -250 p a, referenced to 25 c 4.7 mv/ c r ds(on) drain to source on resistance v gs = - 10v, i d = - 6.7a 36 44 m : v gs = - 4.5v, i d = - 5.5a 48 64 v gs = - 10v, i d = - 6.7a, t j = 125 c 53 69 g fs forward transconductance v ds = - 5v, i d = - 6.7a 16 s dynamic characteristics c iss input capacitance v ds = -20v, v gs = 0v, f = 1mhz 1165 1550 pf c oss output capacitance 165 220 pf c rss reverse transfer capacitance 90 135 pf r g gate resistance f = 1mhz 4 : switching characteristics t d(on) turn-on delay time v dd = - 20v, i d = - 6.7a v gs = - 10v, r gen = 6 : 6 12 ns t r rise time 15 26 ns t d(off) turn-off delay time 22 35 ns t f fall time 7 14 ns q g(tot) total gate charge at 10v v dd = - 20v, i d = - 6.7a v gs = - 10v 21 29 nc q gs gate to source gate charge 3.4 nc q gd gate to drain ?miller? charge 4 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = - 6.7a (note 2) 0.86 1.2 v t rr reverse recovery time i f = - 6.7a, di/dt = 100a/ p s 29 43 ns q rr reverse recovery charge 30 44 nc notes: 1: r t ja is sum of junction-to-case and case-to-ambient thermal resistan ce where the case thermal reference is defined as the solder mo unting surface of the drain pins. r t jc is guaranteed by design while r t jc is determined by the user?s board design. 2: pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. 3: starting t j = 25 c, l = 3mh, i as = 7.5a, v dd = 40v, v gs = 10v. a. 40c/w when mounted on a 1 in 2 p a d o f 2 o z c o p p e r b. 96c/w when mounted on a minimum pad.
FDD4243 40v p-channel powertrench ? mosfet FDD4243 rev.c www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 012345 0 10 20 30 40 50 60 v gs = -5v v gs = -10v v gs = - 6v v gs = -4.5v pulse duration = 80 p s duty cycle = 0.5%max v gs = - 3.0v v gs = -4v -i d , drain current (a) -v ds , drain to source voltage (v) on region characteristics figure 2. 0 102030405060 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs = -6v v gs = -10v v gs = -5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current(a) v gs = -4.5v v gs = -3.0v v gs = -4v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = -6.7a v gs = -10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 2345678910 20 40 60 80 100 120 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = -6.7a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 123456 0 10 20 30 40 50 60 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c - i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.40.60.81.01.2 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v - i s , reverse drain current (a) - v sd , body diode forward voltage (v) 30 s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDD4243 40v p-channel powertrench ? mosfet FDD4243 rev.c www.fairchildsemi.com 4 figure 7. 0 4 8 12162024 0 2 4 6 8 10 i d = -6.7a v dd = -30v v dd = -20v v dd = -10v q g , gate charge(nc) -v gs , gate to source voltage(v) gate charge characteristics figure 8. 0.1 1 10 100 1000 50 30 3000 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 2 4 6 8 10 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) - i as , avalanche current(a) 1 30 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 5 10 15 20 25 limited by package r t jc = 3.0 o c/w v gs = -4.5v v gs = -10v - i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 110100 0.1 1 10 100 0.5 100ms 10ms 1ms 100us single pulse t j = max rated t c = 25 o c operation in this area may be limited by r ds(on) -v ds , drain to source voltage (v) -i d , drain current (a) figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 1000 10000 30 v gs = -10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) t c = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t c ? 125 ---------------------- - s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
FDD4243 40v p-channel powertrench ? mosfet FDD4243 rev.c www.fairchildsemi.com 5 figure 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 0.003 duty cycle-descending order normalized thermal impedance, z t jc t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c typical characteristics t j = 25c unless otherwise noted
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