sot89 pnp silicon power (switching) transistor isssue 1 - may 1999 features * 2w power dissipation * 10a peak pulse current * excellent h fe characteristics up to 10 amps * extremely low saturation voltage e.g. 12mv typ. * extremely low equivalent on-resistance; r ce(sat) 77m at 3a partmarking detail - 717 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -12 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -5 v peak pulse current ** i cm -10 a continuous collector current i c -3 a base current i b -500 ma power dissipation at t amb =25c p tot 1? 2? w w operating and storage temperature range t j :t stg -55 to +150 c ? recommended p tot calculated using fr4 measuring 15x15x0.6mm ? maximum power dissipation is calculated assuming that the device is mounted on fr4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **measured under pulsed conditions. pulse width=300s. duty cycle ? 2% spice parameter data is available upon request for these devices refer to the handling instructions for soldering surface mount components. FCX717
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -12 -35 v i c =-100a collector-emitter breakdown voltage v (br)ceo -12 -25 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 -8.5 v i e =-100a collector cut-off current i cbo -100 na v cb =-10v emitter cut-off current i ebo -100 na v eb =-4v collector emitter cut-off current i ces -100 na v ces =-10v collector-emitter saturation voltage v ce(sat) -12 -110 -230 -20 -150 -320 mv mv mv i c =-0.1a, i b =-10ma* i c =-1a, i b =-10ma* i c =-3a, i b =-50ma* base-emitter saturation voltage v be(sat) -0.92 -1.05 v i c =-3a, i b =-50ma* base-emitter turn-on voltage v be(on) -0.85 -1.0 v i c =-3a, v ce =-2v* static forward current transfer ratio h fe 300 300 160 60 45 475 450 240 100 70 i c =-10ma, v ce =-2v* i c =-0.1a, v ce =-2v* i c =-3a, v ce =-2v* i c =-8a, v ce =-2v* i c =-10a, v ce =-2v* transition frequency f t 80 110 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 21 30 pf v cb =-10v, f=1mhz turn-on time t (on) 70 ns v cc =-6v, i c =-2a i b1 =i b2 =50ma turn-off time t (off) 130 ns *measured under pulsed conditions. pulse width=300s. duty cycle 2% FCX717
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