1 UM3304 n-ch and p-ch 30v fast switching mosfets rating symbol parameter n-ch p-ch units v ds drain-source voltage 30 -30 v v gs gate-sou u ce voltage f 20 3 f 20 3 v i d @t a =25 continuous drain current, v gs @ 10v 1 4.6 -3 a i d @t a =70 continuous drain current, v gs @ 10v 1 3.7 -2.3 a i dm pulsed drain current 2 9.2 -6 a p d @t a =25 total power dissipation 4 1.5 1.5 w t stg storage temperature range -55 to 150 -55 to 150 t j operating junction temperature range -55 to 150 -55 to 150 symbol parameter 3 typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w 3 r jc thermal resistance junction-case 1 --- 60 /w 3 bvdss rdson id 30v 45m
4.6a -30v 125m
-3a the UM3304 is the highest performance trench n-ch and p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UM3304 meet the rohs and green product requirement with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z ccfl back-light inverter absolute maximum ratings thermal data sop8 pin configuration product summery
2 UM3304 n-ch and p-ch 30v fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 30 --- --- v ? bv dss a? t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.016 --- v/ v gs =10v , i d =4a --- 38 45 r ds(on) static drain-source on-resistance 2 v gs =4.5v , i d =2a --- 56 70 m : v gs(th) gate threshold voltage 1.0 1.5 2.5 v ? v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =250ua --- -3.04 --- mv/ v ds =24v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =24v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =5v , i d =4a --- 8 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2.3 4.6 : q g total gate charge (4.5v) --- 2.75 q gs gate-source charge --- 0.67 q gd gate-drain charge v ds =20v , v gs =4.5v , i d =4a --- 1.52 nc t d(on) turn-on delay time --- 3.6 t r rise time --- 14.6 t d(off) turn-off delay time --- 11.5 t f fall time v dd =15v , v gs =10v , r g =3.3 : i d =4a --- 1.9 ns c iss input capacitance --- 220 c oss output capacitance --- 38 c rss reverse transfer capacitance v ds =15v , v gs =0v , f=1mhz --- 32 pf symbol parameter 3 conditions min. typ. max. unit i s continuous source current 1,4 --- --- 4.6 a i sm pulsed source current 2,4 v g =v d =0v , force current --- --- 9.2 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1 v note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. n-channel electrical characteristics (t j =25 , unless otherwise noted) diode characteristics
3 UM3304 n-ch and p-ch 30v fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -30 --- --- v ? bv dss a? t j bv dss temperature coefficient reference to 25 , i d =-1ma --- -0.02 --- v/ v gs =-10v , i d =-3a --- 105 125 r ds(on) static drain-source on-resistance 2 v gs =-4.5v , i d =-1.5a --- 180 215 m : v gs(th) gate threshold voltage -1.0 -1.5 -2.5 v ? v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =-250ua --- 3.72 --- mv/ v ds =-24v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =-24v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =-5v , i d =-3a --- 3.8 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 26 52 : q g total gate charge (-4.5v) --- 3.3 --- q gs gate-source charge --- 0.88 --- q gd gate-drain charge v ds =-20v , v gs =-4.5v , i d =-1a --- 1.55 --- nc t d(on) turn-on delay time --- 9.6 --- t r rise time --- 6.7 --- t d(off) turn-off delay time --- 21.5 --- t f fall time v dd =-15v , v gs =-10v , r g =3.3 : , i d =-1a --- 3.3 --- ns c iss input capacitance --- 203 --- c oss output capacitance --- 42 --- c rss reverse transfer capacitance v ds =-15v , v gs =0v , f=1mhz --- 34 --- pf symbol parameter 3 conditions min. typ. max. unit i s continuous source current 1,4 --- --- -3 a i sm pulsed source current 2,4 v g =v d =0v , force current --- --- -6 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1.2 v note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. p-channel electrical characteristics (t j =25 , unless otherwise noted) diode characteristics
4 UM3304 n-ch and p-ch 30v fast switching mosfets 0 2 4 6 8 10 00.511.52 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 40.0 50.0 60.0 70.0 80.0 246810 v gs (v) r dson (m
) i d =4a 0 2 4 6 8 10 00.30.60.91.2 v sd , source-to-drain voltage (v) i s source current(a) t j =150 : t j =25 : 0 2 4 6 8 10 0246 q g , total gate charge (nc) v gs gate to source voltage (v) i d =4a 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( : ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( : ) normalized on resistance n-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j
5 UM3304 n-ch and p-ch 30v fast switching mosfets 10 100 1000 15913172125 v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 v ds (v) i d (a) t a =25 o c single pulse 100ms 100us 1ms 10ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr ja t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 gate charge waveform
6 UM3304 n-ch and p-ch 30v fast switching mosfets 0 1 2 3 4 5 6 00.5 11.52 -v ds , drain-to-source voltage (v) -i d drain current (a) v gs =-10v v gs =-7v v gs =-5v v gs =-4.5v v gs =-3v 90 130 170 210 250 46810 -v gs (v) r dson (m
) i d =-3a 0 1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 : t j =25 : 0 2 4 6 8 0246 q g , total gate charge (nc) -v gs gate to source voltage (v) v ds =-15v i d =-1a 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( : ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( : ) normalized on resistance n-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) v.s t j fig.6 normalized r dson v.s t j
7 UM3304 n-ch and p-ch 30v fast switching mosfets 10 100 1000 15913172125 -v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 -v ds (v) -i d (a) t a =25 o c single pulse 100ms 1ms 10ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 gate charge waveform
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