silicon epibase pnp darlington transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8218 issue 1 page 1 of 2 BDS21SMD ? high dc current gain ? hermetic ceramic surface mount package ? designed for general purpose amplifiers and low speed switching applications ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage -80v v ceo collector ? emitter voltage -80v v ebo emitter ? base voltage -5v i c continuous collector current -5a i b base current -0.1a p d total power dissipation at t c = 25c 35w derate above 25c 0.2w/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 5 c/w ** this datasheet supersedes document 7603
silicon epibase pnp darlington transistor BDS21SMD semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8218 issue 1 page 2 of 2 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v cb = -80v i e = 0 -0.2 v cb = -60v i e = 0 i cbo collector-cut-off current t c = 150c -1.0 i ceo collector-cut-off current v ce = -40v i b = 0 -0.5 i ebo emitter-cut-off current v eb = -5v i c = 0 -2 ma i c = -0.5a v ce = -3v 1000 h fe (1) forward-current transfer ratio i c = -3a v ce = -3v 1000 i c = -3a i b = -12ma -2 v ce(sat) (1) collector-emitter saturation voltage i c = -5a i b = -20ma -4 v be(sat) (1) base-emitter saturation voltage i c = -5a i b = -20ma -2.8 v be(on) (1) base-emitter on voltage i c = -3a v ce = -3v -3.5 v dynamic characteristics i c = -0.5a v ce = -4v f t transition frequency f = 2mhz 8 mhz notes notes notes notes (1) pulse width 300us, 2% mechanical data dimensions in mm (inches) 3.60 (0.142) max. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 0.89 (0.035) min. 4.14 (0.163) 3.84 (0.151) 10.69 (0.421) 10.39 (0.409) 9.67 (0.381) 9.38 (0.369) 11.58 (0.456) 11.28 (0.444) 16.02 (0.631) 15.73 (0.619) 0.50 (0.020) 0.26 (0.010) 0.76 (0.030) min. 1 3 2 smd1 (to - 276ab) underside view pad 1 ? base pad 2 ? collector pad 3 - emitter
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