? semiconductor components industries, llc, 2006 february, 2006 ? rev. 11 1 publication order number: mje3439/d mje3439 npn silicon high?voltage power transistor this device is designed for use in line?operated equipment requiring high f t . features ? high dc current gain ? h fe = 40?160 @ i c = 20 madc ? current gain bandwidth product ? f t = 15 mhz (min) @ i c = 10 madc ? low output capacitance ? c ob = 10 pf (max) @ f = 1.0 mhz ? pb?free package is available* maximum ratings rating symbol value unit ??????????? ??????????? collector?emitter voltage ???? ???? ???? ???? ??? ??? ??????????? ??????????? ???? ???? ???? ???? ??? ??? ??????????? ??????????? ???? ???? ???? ???? ??? ??? ??????????? ??????????? ???? ???? ???? ???? ??? ??? ??????????? ??????????? ???? ???? ???? ???? ??? ??? ??????????? ??????????? c derate above 25 c ???? ???? ???? ???? ??? ??? c ??????????? ? ????????? ? ??????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ???? ? ?? ? ???? ?65 to +150 ??? ? ? ? ??? c thermal characteristics characteristic symbol max unit ??????????? ??????????? thermal resistance, junction?to?case ???? ???? jc ???? ???? ??? ??? c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information mje3439 to?225 500 units/box 0.3 ampere power transistor npn silicon 350 volts, 15 watts http://onsemi.com MJE3439G to?225 (pb?free) 500 units/box to?225 case 77 style 1 2 1 3 marking diagram yww e3439g y = year ww = work week e3439 = device code g = pb?free package
mje3439 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ????????????????????? ????????????????????? characteristic ????? ????? ???? ???? ??? ??? ???? ???? ????????????????????????????????? ????????????????????????????????? ????????????????????? ????????????????????? collector?emitter sustaining voltage (i c = 5.0 madc, i b = 0) ????? ????? ???? ???? ??? ??? ???? ???? ????????????????????? ? ??????????????????? ? ????????????????????? collector cutoff current (v ce = 300 vdc, i b = 0) ????? ? ??? ? ????? i ceo ???? ? ?? ? ???? ? ??? ? ? ? ??? 20 ???? ? ?? ? ???? adc ????????????????????? ? ??????????????????? ? ????????????????????? collector cutoff current (v ce = 450 vdc, v eb(off) = 1.5 vdc) ????? ? ??? ? ????? i cex ???? ? ?? ? ???? ? ??? ? ? ? ??? 500 ???? ? ?? ? ???? adc ????????????????????? ????????????????????? ????? ????? ???? ???? ??? ??? ???? ???? adc ????????????????????? ? ??????????????????? ? ????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? ? ??? ? ? ? ??? 20 ???? ? ?? ? ???? adc ????????????????????????????????? ????????????????????????????????? on characteristics ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? dc current gain (i c = 2.0 madc, v ce = 10 vdc) (i c = 20 madc, v ce = 10 vdc) ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 30 15 ??? ? ? ? ? ? ? ??? ? 200 ???? ? ?? ? ? ?? ? ???? ? ????????????????????? ????????????????????? ????? ????? ???? ???? ??? ??? ???? ???? ????????????????????? ? ??????????????????? ? ????????????????????? base?emitter saturation voltage (i c = 50 madc, i b = 4.0 madc) ????? ? ??? ? ????? v be(sat) ???? ? ?? ? ???? ? ??? ? ? ? ??? 1.3 ???? ? ?? ? ???? vdc ????????????????????? ? ??????????????????? ? ????????????????????? base?emitter on voltage (i c = 50 madc, v ce = 10 vdc) ????? ? ??? ? ????? v be(on) ???? ? ?? ? ???? ? ??? ? ? ? ??? 0.8 ???? ? ?? ? ???? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ????????????????????? ????????????????????? current?gain ? bandwidth product (i c = 10 madc, v ce = 10 vdc, f = 5.0 mhz) ????? ????? ???? ???? ??? ??? ???? ???? ????????????????????? ? ??????????????????? ? ????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) ????? ? ??? ? ????? c ob ???? ? ?? ? ???? ? ??? ? ? ? ??? 10 ???? ? ?? ? ???? pf ????????????????????? ? ??????????????????? ? ????????????????????? small?signal current gain (i c = 5.0 madc, v ce = 10 vdc, f = 1.0 khz) ????? ? ??? ? ????? h fe ???? ? ?? ? ???? 25 ??? ? ? ? ??? ? ???? ? ?? ? ???? ?
mje3439 http://onsemi.com 3 16 0 0 40 80 120 160 figure 1. power?temperature derating curve t c , case temperature ( c) p d , power dissipation (watts) 12 14 8.0 10 4.0 6.0 2.0 20 60 100 140 1.0 1.0 figure 2. active?region safe operating area v ce , collector?emitter voltage (volts) 0.5 0.3 0.2 0.05 0.001 5.0 10 i c , collector current (amp) 0.02 0.03 2.0 20 50 1000 0.1 100 200 500 mje3439 0.7 0.07 0.01 0.002 0.003 0.005 0.007 3.0 7.0 30 70 300 the safe operating area curves indicate i c ? v ce limits below which the device will not enter secondary breakdown. collector load lines for specific circuits must fall within the applicable safe area to avoid causing a catastrophic failure. t o insure operation below the maximum t j , power?temperature derating must be observed for both steady state and pulse power conditions.
mje3439 http://onsemi.com 4 package dimensions to?225 case 77?09 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 077?01 thru ?08 obsolete, new standard 077?09. ?b? ?a? m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 ??? 1.02 ??? style 1: pin 1. emitter 2. collector 3. base on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mje3439/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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