pnp silicon planar medium power transistor issue 1 ? april 94 features * 25 volt v ceo * 2 amp continuous current * low saturation voltage absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v peak pulse current i cm -6 a continuous collector current i c -2 a power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j: t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -35 v i c =-100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo -25 v i c =-10ma, i b =0* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a, i c =0 collector cut-off current i cbo -0.1 -10 m a m a v cb =-30v v cb =-30v, t amb =100c emitter cut-off current i ebo -0.1 m a v eb =-4v, i e =0 collector-emitter saturation voltage v ce(sat) -0.12 -0.23 -0.3 -0.5 v v i c =1a, i b =-100ma* i c =2a, i b =-200ma* base-emitter saturation voltage v be(sat) -0.9 -1.25 v i c =1a, i b =-100ma* base-emitter turn-on voltage v be(on) -0.8 -1 v ic=-1a, v ce =-2v* static forward current transfer ratio h fe 70 100 75 15 200 200 150 50 300 i c =-50ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% e-line to92 compatible ZTX749 3-254 c b e -40 0.0001 derating curve t -temperature (c) m ax po we r d issipati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) ZTX749 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. transition frequency f t 100 160 mhz i c =-100ma, v ce =-5v f=100mhz output cpacitance c obo 55 100 pf v cb =-10v f=1mhz switching times t on 40 ns i c =-500ma, v cc =-10v i b1 =i b2 =-50ma t off 450 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance:junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. 3-255
pnp silicon planar medium power transistor issue 1 ? april 94 features * 25 volt v ceo * 2 amp continuous current * low saturation voltage absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v peak pulse current i cm -6 a continuous collector current i c -2 a power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j: t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -35 v i c =-100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo -25 v i c =-10ma, i b =0* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a, i c =0 collector cut-off current i cbo -0.1 -10 m a m a v cb =-30v v cb =-30v, t amb =100c emitter cut-off current i ebo -0.1 m a v eb =-4v, i e =0 collector-emitter saturation voltage v ce(sat) -0.12 -0.23 -0.3 -0.5 v v i c =1a, i b =-100ma* i c =2a, i b =-200ma* base-emitter saturation voltage v be(sat) -0.9 -1.25 v i c =1a, i b =-100ma* base-emitter turn-on voltage v be(on) -0.8 -1 v ic=-1a, v ce =-2v* static forward current transfer ratio h fe 70 100 75 15 200 200 150 50 300 i c =-50ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% e-line to92 compatible ZTX749 3-254 c b e -40 0.0001 derating curve t -temperature (c) m ax po we r d issipati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) ZTX749 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. transition frequency f t 100 160 mhz i c =-100ma, v ce =-5v f=100mhz output cpacitance c obo 55 100 pf v cb =-10v f=1mhz switching times t on 40 ns i c =-500ma, v cc =-10v i b1 =i b2 =-50ma t off 450 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance:junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. 3-255
typical characteristics v ce(sat) v i c i c - collector current (amps) v ce (sa t ) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h fe - gain v be (sa t ) - (v olts) v be - (v olts) i c - c o l le c to r c u r r e nt ( amps ) v ce - collector voltage (volts) safe operating area 110100 0.01 0.1 1.0 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 40 80 120 160 200 switching speeds i c - collector current (amps) switching time 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr 0.001 1 0.01 0.1 ts ns 600 200 1000 1200 td tr tf ns 80 40 120 160 0 140 100 60 20 v ce =2v i c /i b =10 v ce =2v v ce =-10v 0.6 1.0 1.2 0.8 0.4 0.6 1.0 1.2 0.8 0.4 0.2 0.6 1.0 0.8 0.4 i c /i b =100 i c /i b =10 0.001 1 0.01 0.1 10 i c /i b =100 0.001 1 0.01 0.1 10 0 1.2 1.6 1.8 1.4 0.001 1 0.01 0.1 10 10 10 ZTX749 3-256
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