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| inchange semiconductor product specification silicon pnp power transistors 2n6312 2N6313 2n6314 description with to-66 package low collector saturation voltage low leakage current applications designed for general-purpose power amplifier and switching applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n6312 -40 2N6313 -60 v cbo collector-base voltage 2n6314 open emitter -80 v 2n6312 -40 2N6313 -60 v ceo collector-emitter voltage 2n6314 open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a i cm collector current-peak -10 a i b base current -2 a p d total power dissipation t c =25 75 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 2.32 /w fig.1 simplified outline (to-66) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2n6312 2N6313 2n6314 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n6312 -40 2N6313 -60 v ceo(sus) collector-emitter sustaining voltage 2n6314 i c =-0.1a ;i b =0 -80 v v cesat-1 collector-emitter saturation voltage i c =-1.5a; i b =-0.15a -0.7 v v cesat-2 collector-emitter saturation voltage i c =-3a; i b =-0.3a -2.0 v v cesat-3 collector-emitter saturation voltage i c =-5a; i b =-1.25a -4.0 v v be base-emitter on voltage i c =-1.5a ; v ce =-2v -1.4 v 2n6312 v ce =-30v; i b =0 2N6313 v ce =-50v; i b =0 i ceo collector cut-off current 2n6314 v ce =-70v; i b =0 -1.0 ma 2n6312 v cb =-40v; i e =0 2N6313 v cb =-60v; i e =0 i cbo collector cut-off current 2n6314 v cb =-80v; i e =0 -50 a i cex collector cut-off current v ce =rated v ce ; v be(off) =1.5v t c =125 -0.1 -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.5 ma h fe-1 dc current gain i c =-0.5a ; v ce =-2v 40 h fe-2 dc current gain i c =-1.5a ; v ce =-2v 25 100 h fe-3 dc current gain i c =-3a ; v ce =-2v 10 h fe-4 dc current gain i c =-5a ; v ce =-4v 4 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 300 pf f t transition frequency i c =-0.5a;v ce =-10v;f=1.0mhz 4 mhz inchange semiconductor product specification 3 silicon pnp power transistors 2n6312 2N6313 2n6314 package outline fig.2 outline dimensions |
Price & Availability of 2N6313
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