AON2420 30v n-channel alphamos general description product summary v ds i d (at v gs =10v) 8a r ds(on) (at v gs =10v) < 11.7m w r ds(on) (at v gs =4.5v) < 17.5m w application symbol v ds v gs parameter drain-source voltage 30 gate-source voltage v 20 ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant 30v v maximum units ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al absolute maximum ratings t a =25c unless otherwise noted dfn 2x2b top view bottom view pin 1 d d g d d s d s g d s v gs i dm v ds spike v spike t j , t stg symbol t 10s steady-state power dissipation a 32 pulsed drain current c p d 6 8 gate-source voltage 100ns 36 maximum junction-to-ambient a d 80 -55 to 150 1.8 units junction and storage temperature range 45 parameter w t a =25c t a =70c c thermal characteristics typ max maximum junction-to-ambient a v c/w r q ja 37 66 c/w 2.8 20 v a continuous drain current g i d t a =25c t a =100c rev0 : april 2012 www.aosmd.com page 1 of 5
AON2420 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.2 v 9.6 11.7 t j =125c 13 15.8 13.6 17.5 m w g fs 41 s v sd 0.7 1 v i s 3.5 a c iss 552 pf c oss 227 pf c rss 28 pf r g 1.7 3.4 4.8 w q g (10v) 8.9 12 nc q g (4.5v) 4.3 5.8 nc q gs 1.5 nc q gd 1.7 nc t d(on) 4.8 ns t r 3.3 ns t 18.5 ns maximum body-diode continuous current dynamic parameters gate-body leakage current v gs =4.5v, i d =6a v ds =5v, i d =8a forward transconductance switching parameters turn-on delaytime v gs =10v, v ds =15v, r l =1.9 w , r =3 w gate resistance total gate charge turn-off delaytime i s =1a,v gs =0v turn-on rise time diode forward voltage v gs =0v, v ds =0v, f=1mhz gate drain charge total gate charge input capacitance output capacitance reverse transfer capacitance v gs =10v, v ds =15v, i d =8a gate source charge v gs =0v, v ds =15v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 m a, v gs =0v v ds =v gs , i d =250 m a v gs =10v, i d =8a drain-source breakdown voltage r ds(on) static drain-source on-resistance i dss v ds =0v, v gs =20v m a m w zero gate voltage drain current t d(off) 18.5 ns t f 4.0 ns t rr 13.2 ns q rr 3.2 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =8a, di/dt=100a/ m s r gen =3 w turn-off fall time body diode reverse recovery charge i f =8a, di/dt=100a/ m s turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. b. the power dissipation p d is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150 c. the value in any given application depends on the user's specific board de sign. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev0 : april 2012 www.aosmd.com page 2 of 5
AON2420 typical electrical and thermal characteristics 30 20 0 10 20 30 40 50 60 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 4 8 12 16 20 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6a v gs =10v i d =8a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.0v 3.5v 10v 4.5v 4v 20 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =8a 25 c 125 c rev0 : april 2012 www.aosmd.com page 3 of 5
AON2420 typical electrical and thermal characteristics 30 20 0 2 4 6 8 10 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =8a 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to- ambient t a =25 c 20 operating area (note f) (note h) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note h) d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse r q ja =80 c/w rev0 : april 2012 www.aosmd.com page 4 of 5
AON2420 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev0 : april 2012 www.aosmd.com page 5 of 5
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