SSM3K15AFS 2010-11-29 1 toshiba field effect transistor s ilicon n channel mos type (u-mos iii) SSM3K15AFS load switching applications ? 2.5 v drive ? low on-resistance: r ds(on) = 3.6 ? (max) (@v gs = 4 v) r ds(on) = 6.0 ? (max) (@v gs = 2.5 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v dc i d 100 drain current pulse i dp 400 ma power dissipation p d 100 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). marking equivalent circuit (top view) unit: mm jedec D jeita D toshiba 2-2h1b weight: 2.4 mg (typ.) ssm 1. gate 2. source 3. drain di 1 2 3 1 2 3
SSM3K15AFS 2010-11-29 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit v (br) dss i d = 0.1 ma, v gs = 0 v 30 ? ? drain-source breakdown voltage v (br) dsx i d = 0.1 ma, v gs = -10 v (note 3) 16 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 v ? ? 1 a gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.8 ? 1.5 v forward transfer admittance |y fs | v ds = 3 v, i d = 10 ma (note 2) 35 ? ? ms i d = 10 ma, v gs = 4 v (note 2) ? 2.3 3.6 drain-source on-resistance r ds (on) i d = 10 ma, v gs = 2.5 v (note 2) ? 3.5 6.0 input capacitance c iss ? 13.5 ? output capacitance c oss ? 8.0 ? reverse transfer capacitance c rss v ds = 3 v, v gs = 0 v, f = 1 mhz ? 6.5 ? pf turn-on time t on ? 5.5 ? switching time turn-off time t off v dd = 5 v, i d = 10 ma v gs = 0 to 5 v, r g = 50 ? 35 ? ns drain-source forward voltage v dsf i d = -100 ma, v gs = 0 v (note 2) ? -0.85 -1.2 v note 2: pulse test note 3: if a reverse bias is applied between gate and sour ce, this device enters v(br)dsx mode. note that the drain-source breakdown voltage is lowered in this mode. switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d = 0.1 ma for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration for using the device. do not use this device under avalanche mode. it may cause the device to break down. handling precaution when handling individual devices (which are not yet mount ing on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. thermal resistance r th (ch-a) and power dissipation p d vary depending on board material, board area, board thickness and pad area. when using this device, please take heat dissipation into consideration (a) test circuit v dd = 5 v r g = 50 duty 1% v in : t r , t f < 5 ns common source ta = 25c (b) v in (c) v out 5 v t on t off 0 v v dd v ds (on) t r t f 10% 90% 90% 10% 0 5 v in out v dd 10 s r g
SSM3K15AFS 2010-11-29 3 i d ? v ds 0 0 0.2 0.4 0.6 300 100 400 0.8 1.0 200 i d ? v gs 1000 0 10 100 0.1 1 0.01 4.0 1.0 2.0 3.0 r ds (on) ? i d 0 200 300 400 100 0 4 6 2 5 1 3 r ds (on) ? ta ? 50 0 50 150 100 0 5 2 6 1 3 4 common source pulse test 10 ma / 4.0 v v th ? ta 2.0 0 ? 50 0 150 50 100 1.0 common source v ds = 3 v i d = 0.1 ma 0 4 0 r ds (on) ? v gs 8 12 4 8 2 6 10 10 2 6 drain-source voltage v ds (v) drain current i d (ma) gate-source voltage v gs (v) drain current i d (ma) drain current i d (ma) drain-source on-resistance r ds (on) ( ? ) gate-source voltage v gs (v) drain-source on-resistance r ds (on) ( ? ) ambient temperature ta (c) drain-source on-resistance r ds (on) ( ? ) ambient temperature ta (c) gate threshold voltage v th (v) i d = 10 ma / v gs = 2.5 v common source ta = 25 c pulse test common source v ds = 3 v pulse test common source ta = 25c pulse test i d = 10 ma common source pulse test v gs = 10 v 2.1 v 3.0 v 4.0 v 2.3 v 2.5 v 2.7 v ? 25 c ta = 100 c 25 c v gs = 2.1 v 10 v 4.0 v 2.7 v 3.0 v 2.3 v 2.5 v ? 25 c ta = 100 c 25 c
SSM3K15AFS 2010-11-29 4 |y fs | ? i d 1 1000 10 1000 10 100 100 1 common source v ds = 3 v ta= 25c pulse test i dr ? v ds 1000 0 10 100 0.1 1 ?0.5 ?1.0 ?1.5 drain current i d (ma) forward transfer admittance ? y fs ? (ms) drain-source voltage v ds (v) drain reverse current i dr (ma) drain-source voltage v ds (v) c ? v ds capacitance c (pf) 1 0.1 1 10 100 100 10 common source ta = 25c f = 1 mhz v gs = 0 v c iss c oss drain current i d (ma) switching time t (ns) t ? i d 1 1000 100 10 1 100 1000 10 t r t on t off t f common source v dd = 5 v v gs = 0 to 5 v ta = 25 c r g = 50 c rss common source v gs = 0 v pulse test g d s i dr ? 25 c ta =100 c 25 c p d ? ta ambient temperature ta (c) power dissipation p d (mw) 0 0 100 250 160 40 50 150 200 20 60 80 100 140 120
SSM3K15AFS 2010-11-29 5 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? 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