sot23 npn silicon planar vhf/uhf transistor issue 2 ? january 1996 partmarking details ? 3b absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 3v continuous collector current i c 100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 30 v i c =1 m a, i e =0 collector-emitter sustaining voltage v ceo(sus) 15 v i c =3ma, i b =0* emitter-base breakdown voltage v (br)ebo 3v i e =10 m a, i c =0 collector cut-off current i cbo 0.05 m a v cb =15v, i e =0 collector-emitter saturation voltage v ce(sat) 0.4 v i c =10ma, i b =1ma base-emitter saturation voltage v be(sat) 1.0 v i c =10ma, i b =1ma static forward current transfer ratio h fe 20 i c =3ma, v ce =1v transition frequency f t 600 mhz i c =4ma, v ce =10v f=100mhz output capacitance c obo 3.0 1.7 pf pf v cb =0v, f=1mhz v cb =10v, f=1mhz input capacitance c ibo 1.6 pf v eb =0.5v,f=1mhz noise figure n 6.0 db v ce =6v, i c =1ma f=60mhz, r g =400 w common emitter power gain g pe 15 db v cb =12v, i c =6ma f=200mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT918 c b e sot23 3 - 168
|
