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| inchange semiconductor isc product specification isc silicon npn power transistor BUY52A description high current capability fast switching speed low saturation voltage and high gain applications designed for use in high frequenc y and efficiency converters such as motor controllers and industrial equipment such as: switching regulators motor control high frequency and efficiency converters absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current-continuous 30 a i cm collector current-peak 45 a i b b base current-continuous 8 a p c collector power dissipation @t c =25 150 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.17 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUY52A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0 60 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 20a; i b = 2a 1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 30a; i b = 3a 1.5 v v be (sat) base-emitter saturation voltage i c = 30a; i b = 3a 2.0 v i cbo collector cutoff current v cb = 60v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 ma h fe dc current gain i c = 15a; v ce = 4v 20 150 f t current-gain?bandwidth product i c = 1a ; v ce = 15v 10 mhz isc website www.iscsemi.cn |
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