SI6963DQ vishay siliconix new product document number: 71812 s-20220?rev. d, 01-apr-02 www.vishay.com 1 dual p-channel 2.5-v (g-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 20 0.050 @ v gs = - 4.5 v - 3.5 -20 0.085 @ v gs = - 2.5 v - 2.7 SI6963DQ d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top view s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 sec steady state unit drain-source voltage v ds -20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d - 3.5 - 3.0 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d - 2.8 - 2.5 a pulsed drain current i dm -30 a continuous source current (diode conduction) a i s - 1.25 - 0.7 maximum power dissipation a t a = 25 c p d 1.14 0.83 w maximum power dissipation a t a = 70 c p d 0.73 0.53 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 86 110 maximum junction-to-ambient a steady state r thja 124 150 c/w maximum junction-to-foot (drain) steady state r thjf 52 165 notes a. surface mounted on fr4 board.
SI6963DQ vishay siliconix new product www.vishay.com 2 document number: 71812 s-20220?rev. d, 01-apr-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.6 - 1.4 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v, t j = 55 c -25 a on-state drain current a i d(on) v ds -5 v, v gs = - 4.5 v -30 a drain source on state resistance a r v gs = - 4.5 v, i d = - 3.5 a 0.037 0.050 drain-source on-state resistance a r ds(on) v gs = - 2.5 v, i d = - 2.7 a 0.062 0.085 forward transconductance a g fs v ds = - 10 v, i d = - 3.5 a 10 s diode forward voltage a v sd i s = - 1.25 a, v gs = 0 v - 0.72 - 1.2 v dynamic b total gate charge q g 12.5 20 gate-source charge q gs v ds = - 10 v, v gs = - 4.5 v, i d = - 3.5 a 1.9 nc gate-drain charge q gd 3.2 turn-on delay time t d(on) 20 30 rise time t r v dd = - 10 v, r l = 10 26 40 turn-off delay time t d(off) v dd = - 10 v , r l = 10 i d - 1 a, v gen = - 4.5 v, r g = 6 48 75 ns fall time t f 30 45 source-drain reverse recovery time t rr i f = - 1.25 a, di/dt = 100 a/ s 30 50 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 6 12 18 24 30 0246810 v gs = 5 thru 3.5 v t c = - 55 c 125 c 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 2 v 3 v 2.5 v
SI6963DQ vishay siliconix new product document number: 71812 s-20220?rev. d, 01-apr-02 www.vishay.com 3 typical characteristics (25 c unless noted) - on-resistance ( r ds(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 0 3 6 9 12 15 0.00 0.04 0.08 0.12 0.16 0.20 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c rss v ds = 10 v i d = 3.5 a i d - drain current (a) v gs = 4.5 v i d = 3.5 a gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.04 0.08 0.12 0.16 0.20 02468 t j = 25 c i d = 3.5 a 30 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s v gs = 4.5 v t j = 150 c v gs = 2.5 v 0 400 800 1200 1600 2000 048121620 c oss c iss
SI6963DQ vishay siliconix new product www.vishay.com 4 document number: 71812 s-20220?rev. d, 01-apr-02 typical characteristics (25 c unless noted) 0 40 80 20 power (w) single pulse power, junction-to-ambient time (sec) 60 10 -3 10 -2 1 10 600 10 -1 10 -4 100 - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 115 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 0.1 10 1 0.01 0.001 100
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