brx44 brx47 BRX45 brx48 brx46 brx49 silicon controlled rectifier 0.8 amp, 30 thru 400 volts to-92 case central semiconductor corp. tm r0 (27-april 2004) description: the central semiconductor brx44 series types are pnpn silicon controlled rectifiers manufactured in a to-92 case, designed for control systems and sensing circuit applications. marking code: full part number maximum ratings: (t a =25c unless otherwise noted) symbol brx44 BRX45 brx46 brx47 brx48 brx49 units peak repetitive off-state voltage v drm, v rrm 30 60 100 200 300 400 v rms on-state current (t c =40c) i t(rms) 0.8 a average on-state current (t c =40c) i t(av) 0.5 a nonrept. on-state current (t c =60c) i tsm 10 a fusing current (t=10ms) i 2 t 0.24 a 2 s peak reverse gate voltage (i gr =10a) v grm 8.0 v peak gate current (t=10s) i gm 1.0 a peak gate dissipation (t=10s) p gm 2.0 w gate dissipation (t=20ms) p g (av) 0.1 w operating and storage junction temperature t j, t stg -40 to +125 c thermal resistance jc 100 c/w thermal resistance ja 200 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i drm, i rrm rated v drm, v rrm, r gk =1.0k ?, t c =25c 1.0 a i drm, i rrm rated v drm , v rrm , r gk =1.0k ?, t c =125c 0.1 ma v tm i t =1.0a 1.7 v i gt v d =6.0v, r l =10 ? 200 a v gt v d =6.0v, r l =10 ? 0.8 v i h r gk =1.0k ? 5.0 ma i l r gk =1.0k ? 6.0 ma dv/dt v d =0.67v x v drm, r gk =1.0k ?, t c =125c 100 v/s di/dt i g = 10ma, di g /dt=0.1a/s , t c =125c 30 a/s
min max min max a (dia) 0.175 0.205 4.45 5.21 b 0.170 0.210 4.32 5.33 c 0.500 - 12.70 - d 0.016 0.022 0.41 0.56 e f g 0.125 0.165 3.18 4.19 h 0.080 0.105 2.03 2.67 i to-92 (rev: r1) 0.015 0.38 dimensions symbol inches millimeters 0.100 2.54 0.050 1.27 central semiconductor corp. tm to-92 case - mechanical outline brx44 brx47 BRX45 brx48 brx46 brx49 silicon controlled rectifier 0.8 amp, 30 thru 400 volts r0 (27-april 2004) lead code: 1) anode 2) gate 3) cathode marking code: full part number
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