gbu12a ... gbu12m gbu12a ... gbu12m silicon-bridge-rectifiers silizium-brckengleichrichter version 2010-03-31 dimensions - ma?e [mm] nominal current nennstrom 12 a alternating input voltage eingangswechselspannung 35...700 v plastic case kunststoffgeh?use 20.8 x 3.3 x 18 [mm] weight approx. C gewicht ca. 3.8 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging bulk standard lieferform lose im karton recognized product C underwriters laboratories inc.? file e175067 anerkanntes produkt C underwriters laboratories inc.? nr. e175067 maximum ratings grenzwerte type typ max. alternating input voltage max. eingangswechselspannung v vrms [v] repetitive peak reverse voltage periodische spitzensperrspannung v rrm [v] 1 ) gbu12a 35 50 gbu12b 70 100 gbu12d 140 200 gbu12g 280 400 gbu12j 420 600 gbu12k 560 800 gbu12m 700 1000 repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 60 a 2 ) peak forward surge current, 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 270/300 a rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 375 a 2 s operating junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+150c -50...+150c admissible torque for mounting zul?ssiges anzugsdrehmoment m3 9 10% lb.in. 1 10% nm 1 valid per diode C gltig pro diode 2 valid, if leads are kept at ambient temperature t a = 50c at a distance of 5 mm from case gltig, wenn die anschlussdr?hte in 5 mm vom geh?use auf umgebungstemperatur t a = 50c gehalten werden ? diotec semiconductor ag http://www.diotec.com/ 1 21.5 0.7 3.6 0.2 5.08 1.1 +0.2 1 . 7 0 . 1 5 . 6 0.5 +0.1 2.2 3.4 0.1 5 . 3 1 8 . 2 0 . 2 gbu ... + C ~ ~ 1.8 - 0.1
gbu12a ... gbu12m characteristics kennwerte max. rectified current without cooling fin dauergrenzstrom ohne khlblech t a = 50c r-load c-load i fav i fav 8.4 a 1 ) 7.4 a 1 ) max. rectified current with cooling fin 300 cm2 dauergrenzstrom mit khlblech 300 cm 2 t a = 50c r-load c-load i fav i fav 12.0 a 9.6 a forward voltage C durchlass-spannung t j = 25c i f = 12 a v f < 1.0 v 2 ) leakage current C sperrstrom t j = 25c v r = v rrm i r < 10 a thermal resistance junction to case w?rmewiderstand sperrschicht C geh?use r thc < 2.7 k/w type typ max. admissible load capacitor max. zul?ssiger ladekondensator c l [f] min. required protective resistor min. erforderl. schutzwiderstand r t [] gbu12a 20000 0.2 gbu12b 10000 0.4 gbu12d 5000 0.8 gbu12g 2500 1.6 gbu12j 1500 2.4 gbu12k 1000 3.2 gbu12m 800 4.0 1 valid, if leads are kept at ambient temperature t a = 50c at a distance of 5 mm from case gltig, wenn die anschlussdr?hte in 5 mm vom geh?use auf umgebungstemperatur t a = 50c gehalten werden 2 valid per diode C gltig pro diode 2 http://www.diotec.com/ ? diotec semiconductor ag rated forward current versus ambient temperature zul. richtstrom in abh. von der umgebungstemp. i fav [%] 120 100 80 60 40 20 0 [c] t a 150 100 50 0 10 10 10 1 10 3 2 -1 [a] i f forward characteristics (typical values) durchlasskennlinien (typische werte) 0.4 v f 0.8 1.0 1.2 1.4 [v] 1.8 t = 25c j t = 125c j 270a-(12a-1v)
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