transistors 1 publication date: august 2003 sjc00297aed 2SC5845 silicon npn epitaxial planar type for general amplification features ? high forward current transfer ratio h fe ? mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine pack- ing absolute maximum ratings t a = 25 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 ? , i e = 060v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v emitter-base voltage (collector open) v ebo i e = 10 ? , i c = 07v collector-base cutoff current (emitter open) i cbo v cb = 20 v, i e = 0 0.1 a collector-emitter cutoff current (base open) i ceo v ce = 10 v, i b = 0 100 a forward current transfer ratio h fe v ce = 10 v, i c = 2 ma 160 460 ? collector-emitter saturation voltage v ce(sat) i c = 100 ma, i b = 10 ma 0.1 0.3 v collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 2.2 pf (common base, input open circuited) transition frequency f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 100 mhz electrical characteristics t a = 25 c 3 c unit: mm parameter symbol rating unit collector-base voltage (emitter open) v cbo 60 v collector-emitter voltage (base open) v ceo 50 v emitter-base voltage (collector open) v ebo 7v collector current i c 100 ma peak collector current i cp 200 ma collector power dissipation p c 200 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c marking symbol: 7m 0.40 +0.10 ?0.05 (0.65) 1.50 +0.25 ?0.05 2.8 +0.2 ?0.3 2 1 3 (0.95) (0.95) 1.9 0.1 2.90 +0.20 ?0.05 0.16 +0.10 ?0.06 0.4 0.2 5? 10? 0 to 0.1 1.1 +0.2 ?0.1 1.1 +0.3 ?0.1 1: base 2: emitter 3: collector eiaj: sc-59 mini3-g1 package note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
2SC5845 2 sjc00297aed i c ? v be i b ? v be v ce(sat) ? i c p c ? t a i c ? v ce i c ? i b h fe ? i c c ob ? v cb 0 160 40 120 80 0 240 200 160 120 80 40 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 04 2681012 0 50 40 30 20 10 collector current i c ( ma ) collector-emitter voltage v ce ( v ) i b = 160 a 140 a 100 a 80 a 60 a 40 a 20 a 120 a t a = 25 c 0 0.2 0.4 0.6 0.8 1.0 0 140 120 100 80 60 40 20 collector current i c ( ma ) base current i b ( ma ) v ce = 10v t a = 25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 collector current i c ( ma ) base-emitter voltage v be ( v ) v ce = 10v t a = 75 c ?25 c 25 c 0 0.2 0.4 0.6 0.8 0 3.5 0.5 1.0 1.5 2.0 2.5 3.0 base current i b ( ma ) base-emitter voltage v be ( v ) v ce = 10v t a = 25 c 1 10 100 0.01 0.1 1 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) t a = 75 c ?25 c 25 c i c / i b = 10 1 10 100 1 000 0 50 100 150 200 250 300 350 collector current i c ( ma ) forward current transfer ratio h fe t a = 75 c ?25 c 25 c v ce = 10v 016 8243240 1 10 collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) f = 1 mhz t a = 25 c
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