? semiconductor components industries, llc, 2006 march, 2006 ? rev. 2 1 publication order number: ntjd4105c/d ntjd4105c small signal mosfet 20 v / ? 8.0 v, complementary, +0.63 a / ? 0.775 a, sc ? 88 features ? complementary n and p channel device ? leading ? 8.0 v trench for low r ds(on) performance ? esd protected gate ? esd rating: class 1 ? sc ? 88 package for small footprint (2 x 2 mm) ? pb ? free packages are available applications ? dc ? dc conversion ? load/power switching ? single or dual cell li ? ion battery supplied devices ? cell phones, mp3s, digital cameras, pdas maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage n ? ch v dss 20 v p ? ch ? 8.0 gate ? to ? source voltage n ? ch v gs 12 v p ? ch 8.0 continuous drain current ? steady state (based on r ja ) n ? ch t a = 25 c i d 0.63 a t a = 85 c 0.46 p ? ch t a = 25 c ? 0.775 t a = 85 c ? 0.558 continuous drain current ? steady state (based on r jl ) n ? ch t a = 25 c 0.91 t a = 85 c 0.65 p ? ch t a = 25 c ? 1.1 t a = 85 c ? 0.8 pulsed drain current tp 10 s i dm 1.2 a power dissipation ? steady state (based on r ja ) t a = 25 c p d 0.27 w t a = 85 c 0.14 power dissipation ? steady state (based on r jl ) t a = 25 c 0.55 t a = 85 c 0.29 operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) n ? ch i s 0.63 a p ? ch ? 0.775 lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings (note 1) junction ? to ? ambient ? steady state typ r ja 400 c/w max 460 junction ? to ? lead (drain) ? steady state typ r jl 194 max 226 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 oz cu area = 0.9523 in sq. marking diagram & pin assignment http://onsemi.com v (br)dss r ds(on) typ i d max n ? ch 20 v 0.29 @ 4.5 v 0.36 @ 2.5 v 0.63 a tc m 1 6 1 tc = device code m = date code = pb ? free package d1 g2 s2 s1 g1 d2 (note: microdot may be in either location) p ? ch ? 8.0 v 0.22 @ ? 4.5 v 0.32 @ ? 2.5 v 0.51 @ ? 1.8 v ? 0.775 a see detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. ordering information top view sot ? 363 sc ? 88 (6 ? leads) d 1 g 2 s 2 s 1 g 1 d 2 6 5 4 1 2 3 sc ? 88/sot ? 363 case 419b style 28
ntjd4105c http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol n/p test condition min typ max units off characteristics drain ? to ? source breakdown voltage v (br)dss n v gs = 0 v i d = 250 a 20 27 v p i d = ? 250 a ? 8.0 ? 10.5 drain ? to ? source breakdown voltage temperature coeffi- cient v (br)dss / t j n 22 mv/ c p ? 6.0 zero gate voltage drain cur- rent i dss n v gs = 0 v, v ds = 16 v t j = 25 c 1.0 a p v gs = 0 v, v ds = ? 6.4 v 1.0 gate ? to ? source leakage current i gss n v ds = 0 v v gs = 12 v 10 a p v gs = 8.0 10 on characteristics (note 2) gate threshold voltage v gs(th) n v gs = v ds i d = 250 a 0.6 0.92 1.5 v p i d = ? 250 a ? 0.45 ? 0.83 ? 1.0 gate threshold temperature coefficient v gs(th) / t j n ? 2.1 ? mv/ c p 2.2 drain ? to ? source on resist- ance r ds(on) n v gs = 4.5 v i d = 0.63 a 0.29 0.375 p v gs = ? 4.5 v, i d = ? 0.57 a 0.22 0.30 n v gs = 2.5 v, i d = 0.40 a 0.36 0.445 p v gs = ? 2.5 v, i d = ? 0.48 a 0.32 0.46 p v gs = ? 1.8 v, i d = ? 0.20 a 0.51 0.90 forward transconductance g fs n v ds = 4.0 v i d = 0.63 a 2.0 s p v ds = ? 4.0 v, i d = ? 0.57 a 2.0 charges and capacitances input capacitance c iss n f = 1 mhz, v gs = 0 v v ds = 20 v 33 46 pf p v ds = ? 8.0v 160 225 output capacitance c oss n v ds = 20 v 13 22 p v ds = ? 8.0 v 38 55 reverse transfer capacitance c rss n v ds = 20 v 2.8 5.0 p v ds = ? 8.0 v 28 40 total gate charge q g(tot) n v gs = 4.5 v, v ds = 10 v, i d = 0.7 a 1.3 3.0 nc p v gs = ? 4.5 v, v ds = ? 5.0 v, i d = ? 0.6 a 2.2 4.0 threshold gate charge q g(th) n v gs = 4.5 v, v ds = 10 v, i d = 0.7 a 0.1 p v gs = ? 4.5 v, v ds = ? 5.0 v, i d = ? 0.6 a 0.1 gate ? to ? source charge q gs n v gs = 4.5 v, v ds = 10 v, i d = 0.7 a 0.2 p v gs = ? 4.5 v, v ds = ? 5.0 v, i d = ? 0.6 a 0.5 gate ? to ? drain charge q gd n v gs = 4.5 v, v ds = 10 v, i d = 0.7 a 0.4 p v gs = ? 4.5 v, v ds = ? 5.0 v, i d = ? 0.6 a 0.5 switching characteristics (note 3) turn ? on delay time t d(on) n v gs = 4.5 v, v dd = 10 v, i d = 0.5 a, r g = 20 0.083 s rise time t r 0.227 turn ? off delay time t d(off) 0.786 fall time t f 0.506 turn ? on delay time t d(on) p v gs = ? 4.5 v, v dd = ? 4.0 v, i d = ? 0.5 a, r g = 8.0 0.013 rise time t r 0.023 turn ? off delay time t d(off) 0.050 fall time t f 0.036 drain ? source diode characteristics forward diode voltage v sd n v gs = 0 v, t j = 25 c i s = 0.23 a 0.76 1.1 v p i s = ? 0.23 a 0.76 1.1 n v gs = 0 v, t j = 125 c i s = 0.23 a 0.63 p i s = ? 0.23 a 0.63 reverse recovery time t rr n v gs = 0 v, d is /d t = 90 a/ s i s = 0.23 a 0.410 s p i s = ? 0.23 a 0.078 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntjd4105c http://onsemi.com 3 typical n ? channel performance curves (t j = 25 c unless otherwise noted) 0 1.4 1 6 2 v ds , drain ? to ? source voltage (volts) i d, drain current (amps) 0.6 0.2 0 figure 1. on ? region characteristics 0.4 1.2 2 1.2 2.4 1 0.6 0.2 0.8 0 0 figure 2. transfer characteristics v gs , gate ? to ? source voltage (volts) 0.1 0.4 1 0.3 0.2 0 figure 3. on ? resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) i d, drain current (amps) figure 4. on ? resistance vs. drain current and temperature ? 50 0 ? 25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.7 0.2 0.6 t j = ? 55 c t j = 125 c 75 150 i d = 0.63 a v gs = 4.5 v and 2.5 v r ds(on), drain ? to ? source resistance (normalized) 4 25 c 2 1.2 v 0 1.4 figure 6. capacitance variation 1.4 v 1.6 v 1.8 v 10 8 v ds 10 v 0.4 v gs = 2 v v gs = 4.5 v to 2.2 v 0.4 0.8 1.2 0.8 0.4 1.6 t j = 125 c 1.2 0.8 v gs = 4.5 v t j = ? 55 c t j = 25 c 0.1 0.4 1 0.3 0.2 0 i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) 0.7 0.2 0.6 t j = 125 c 0 1.4 0.4 1.2 0.8 v gs = 2.5 v t j = ? 55 c t j = 25 c v gs = 0 v 10 0 80 60 40 20 0 drain ? to ? source voltage (volts) c, capacitance (pf) t j = 25 c c oss c iss c rss 520 15 0.6 0.5 0.5 0.6 1.8 1.6
ntjd4105c http://onsemi.com 4 typical n ? channel performance curves (t j = 25 c unless otherwise noted) v gs figure 7. gate ? to ? source and drain ? to ? source voltage vs. total charge 0 0.6 4 1 0 figure 8. diode forward voltage vs. current q g , total gate charge (nc) v gs, gate ? to ? source voltage (volts) i d = 0.63 a t j = 25 c 1 0.8 2 3 5 0.4 0.2 1.4 0.8 0.1 0 v sd , source ? to ? drain voltage (volts) i s , source current (amps) v gs = 0 v 0.7 0.6 0.4 0 0.4 0.5 0.6 0.2 0.3 1 0.2 t j = 25 c t j = 150 c 1.2 q g(tot) q gs q gd
ntjd4105c http://onsemi.com 5 typical p ? channel performance curves (t j = 25 c unless otherwise noted) 0 1.4 1 6 2 ? v ds , drain ? to ? source voltage (volts) ? i d, drain current (amps) 0.6 0.2 0 figure 9. on ? region characteristics 0.4 1.4 2 1.2 2.4 1 0.6 0.2 0.8 0 0 figure 10. transfer characteristics ? v gs , gate ? to ? source voltage (volts) 0.1 0.4 1 0.3 0.2 0 figure 11. on ? resistance vs. drain current and temperature ? i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) ? i d, drain current (amps) figure 12. on ? resistance vs. drain current and temperature ? 50 0 ? 25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 13. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.5 0.2 0.6 t j = ? 55 c t j = 125 c 75 150 i d = ? 0.7 a v gs = ? 4.5 v and ? 2.5 v r ds(on), drain ? to ? source resistance (normalized) 4 25 c 1.6 ? 1.2 v 0 1.4 figure 14. capacitance variation ? 1.4 v ? 1.6 v ? 1.8 v 8 ? 2 v v ds ? 10 v 0.4 v gs = ? 2.2 v v gs = ? 4.5 v to ? 2.6 v 0.4 0.8 1.2 1.2 0.8 0.4 1.6 t j = 125 c 1.2 0.8 v gs = ? 4.5 v t j = ? 55 c t j = 25 c 0.1 0.4 1 0.3 0.2 0 ? i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) 0.5 0.2 0.6 t j = 125 c 0 1.4 0.4 1.2 0.8 v gs = ? 2.5 v t j = ? 55 c t j = 25 c v gs = 0 v ? 4 ? 8 300 180 120 60 0 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) t j = 25 c c oss c iss c rss 240 ? 60 ? 2
ntjd4105c http://onsemi.com 6 typical p ? channel performance curves (t j = 25 c unless otherwise noted) v gs figure 15. gate ? to ? source and drain ? to ? source voltage vs. total charge 0 1.2 4 1 0 figure 16. diode forward voltage vs. current q g , total gate charge (nc) ? v gs, gate ? to ? source voltage (volts) i d = ? 0.6 a t j = 25 c 2 1.6 2 3 q gs 5 0.8 0.4 2.4 0.8 0.1 0 ? v sd , source ? to ? drain voltage (volts) ? i s , source current (amps) v gs = 0 v 0.7 0.6 0.4 0 0.4 0.5 0.6 0.2 0.3 1 0.2 t j = 25 c t j = 150 c q g(tot) q gd
ntjd4105c http://onsemi.com 7 ordering information device package shipping ? ntjd4105ct1 sot ? 363 3000 / tape & reel NTJD4105CT1G sot ? 363 (pb ? free) 3000 / tape & reel ntjd4105ct2 sot ? 363 3000 / tape & reel ntjd4105ct2g sot ? 363 (pb ? free) 3000 / tape & reel ntjd4105ct4 sot ? 363 10,000 / tape & reel ntjd4105ct4g sot ? 363 (pb ? free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ntjd4105c http://onsemi.com 8 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 26: pin 1. source 1 2. gate 1 3. drain 2 4. source 2 5. gate 2 6. drain 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 ntjd4105c/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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