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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB979 description collector-emitter breakdown voltage- : v (br)ceo = -100v(min) good linearity of h fe wide area of safe operation applications designed for high power amplifications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -5 a i cp collector current-pulse -8 a collector power dissipation @ t c =25 60 p c collector power dissipation @ t a =25 3 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB979 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = -3a; i b = -0.3a b -2.0 v v be (on) base -emitter on voltage i c = -3a; v ce = -5v -1.8 v i cbo collector cutoff current v cb = -100v; i e = 0 -50 a i ebo emitter cutoff current v eb = -3v; i c = 0 -50 a h fe-1 dc current gain i c = -20ma; v ce = -5v 20 h fe-2 dc current gain i c = -1a; v ce = -5v 60 200 h fe-3 dc current gain i c = -3a; v ce = -5v 20 f t current-gain?bandwidth product i c = -0.5a; v ce = -5 v; f= 1mhz 20 mhz ? h fe- 2 classifications q s p 60-120 80-160 100-200 isc website www.iscsemi.cn 2 |
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