symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol device typ max units n-ch 48 62.5 c/w n-ch 74 110 c/w r jl n-ch 35 50 c/w p-ch 48 62.5 c/w p-ch 74 110 c/w r jl p-ch 35 50 c/w maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state -20 t a =70c power dissipation t a =25c p d steady-state junction and storage temperature range a continuous drain current a t a =25c i d t a =70c pulsed drain current b w 6 5 20 2 1.28 -4 -5 2 1.28 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel 40 -40 20 drain-source voltage 20 gate-source voltage thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a AO4614A complementary enhancement mode field effect transistor features n-channel p-channel v ds (v) = 40v -40v i d = 6a (v gs =10v) -5a (v gs = -10v) r ds(on) r ds(on) < 31m ? (v gs =10v) < 45m ? (v gs = -10v) < 45m ? (v gs =4.5v) < 63m ? (v gs = -4.5v) general description the AO4614A uses advanced trench technology mosfets to provide excellen t r ds(on) and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications. standard product AO4614A is pb-free (meets rohs & sony 259 specifications). g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 soic-8 g2 d2 s2 g1 d1 s1 n-channel p-channel alpha & omega semiconductor, ltd. www.aosmd.com
AO4614A symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.3 3 v i d(on) 20 a 23.2 31 t j =125c 36 48 32.6 45 m ? g fs 22 s v sd 0.77 1 v i s 2.5 a c iss 404 pf c oss 95 pf c rss 37 pf r g 2.7 ? q g (10v) 8.3 nc q g (4.5v) 4.2 nc q gs 1.3 nc q gd 2.3 nc t d(on) 4.2 ns t r 3.3 ns t d(off) 15.6 ns t f 3ns t rr 20.5 ns q rr 14.5 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current dynamic parameters body diode reverse recovery charge total gate charge i f =6a, di/dt=100a/ s turn-off delaytime turn-off fall time body diode reverse recovery time i f =6a, di/dt=100a/ s input capacitance n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =10ma, v gs =0v i dss zero gate voltage drain current v ds =32v, v gs =0v a gate-body leakage current v ds =0v, v gs = 20v gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =10v, v ds =5v r ds(on) static drain-source on-resistance forward transconductance m ? v gs =4.5v, i d =5a v ds =5v, i d =6a i s =1a,v gs =0v v gs =10v, i d =6a diode forward voltage v gs =10v, v ds =20v, r l =3.3 ? , r gen =3 ? gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =20v, i d =6a v gs =0v, v ds =20v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 1: sept 2006 alpha & omega semiconductor, ltd. www.aosmd.com
AO4614A symbol min typ max units bv dss -40 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -1.9 -3 v i d(on) -20 a 32.5 45 t j =125c 52 65 51.4 63 m ? g fs 12 s v sd -0.75 -1 v i s -2.5 a c iss 657 pf c oss 143 pf c rss 63 pf r g 6.5 ? q g (10v) 13.6 nc q g (4.5v) 6.8 nc q gs 1.8 nc q gd 3.9 nc t d(on) 7.5 ns t r 6.7 ns t d(off) 26 ns t f 11.2 ns t rr 22.3 ns q rr 15.2 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =-5a, di/dt=100a/ s body diode reverse recovery charge i f =-5a, di/dt=100a/ s turn-on delaytime v gs =-10v, v ds =-20v, r l =4 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-20v, i d =-5a reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-20v, f=1mhz v gs =0v, v ds =0v, f=1mhz diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance v ds =-5v, i d =-4.8a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-5a m ? v gs =-4.5v, i d =-2a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v a gate-body leakage current v ds =0v, v gs =20v drain-source breakdown voltage i d =-10ma, v gs =0v i dss zero gate voltage drain current v ds =-32v, v gs =0v p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 0 : jan 2007 alpha & omega semiconductor, ltd. www.aosmd.com
AO4614A typical electrical and thermal characteristics: n-channel 0 5 10 15 20 25 30 012345 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3.5v 4v 10v 5v 4.5v 0 5 10 15 20 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 20 30 40 50 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =6a v gs =4.5v i d =5a 10 20 30 40 50 60 70 80 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =6a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AO4614A typical electrical and thermal characteristics: n-channel 0 2 4 6 8 10 0246810 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 10203040 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =20v i d = 6a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd. www.aosmd.com
AO4614A typical electrical and thermal characteristics: p-channel 0 5 10 15 20 25 30 012345 -v ds (volts) figure 1: on-region characteristics -i d (a) v gs =-3v -3.5v - 4.5v -10v -4v -5v -6v 0 5 10 15 20 25 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 30 35 40 45 50 55 60 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-5a v gs =-4.5v i d =-2a 20 40 60 80 100 120 140 160 2345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-5a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AO4614A typical electrical and thermal characteristics: p-channel 0 2 4 6 8 10 0 5 10 15 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 0 10203040 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1 s 10s d c r ds(on) limited t j( m a x ) =150c, t a =25c v ds =-20v i d =-5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd. www.aosmd.com
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