c top b e c back e b wbfbp-03d plastic-encapsulate transistors transistor description pnp epitaxial silicon transistor features epitaxial planar die construction complementary npn type available (tk3904lld03) ultra-small surface mount package also available in lead free version application general purpose amplifier, switching for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking:3n c 3n b e maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -5 v i c collector current -continuous -200 ma p d power dissipation 100 mw r ? ja thermal resistance, junction to ambient 1250 /w t j operating temperature 150 t stg storage and temperature -55~ 150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions miin t yp max unit collector-base breakdown voltage v (br)cbo i c =-10 a,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cex v ce =-30v,v eb(off) =-3v -0.05 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a h fe(1) v ce =-1v,i c =-0.1ma 60 h fe(2) v ce =-1v,i c =-1ma 80 h fe(3) v ce =-1v,i c =-10ma 100 300 h fe(4) v ce =-1v,i c =-50ma 60 dc current gain h fe(5) v ce =-1v,i c =-100ma 30 v ce(sat)1 i c =-10ma,i b =-1ma -0.25 v collector-emitter saturation voltage v ce(sat)2 i c =-50ma,i b =-5ma -0.4 v v be(sat)1 i c =-10ma,i b =-1ma -0.65 -0.85 v base-emitter saturation voltage v be(sat)2 i c =-50ma,i b =-5ma -0.95 v transition frequency f t v ce =-20v,i c =-10ma,f=100mhz 250 mhz wbfbp-03d (1.01.00.5) unit: mm 1. base 2. emitter 3. collector TK3906LLD03 2012- 0 willas electronic corp. preliminary
electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min t yp max unit collector output capacitance c ob v cb =-5v,i e =0,f=1mhz 4.5 pf input capacitance c ib v eb =-0.5v,i c =0,f=1mhz 10 pf noise figure nf v ce =-5v,i c =0.1ma,f=1khz,r s =1k ? 4 db delay time t d 35 ns rise time t r v cc =-3v, v be(off) =0.5v,i c =-10ma , i b1 =-1ma 35 n s storage time t s 225 ns fall time t f v cc =-3v, i c =-10ma,i b1 = i b2 =- 1ma 75 n s 2012- 0 willas electronic corp. wbfbp-03d plastic-encapsulate transistors TK3906LLD03 preliminary
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